JLCPCB SMT Parts Library & Component Sourcing
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Gallium Nitride (GaN) Devices
(172)- Manufacturer
- Ampleon
- BeRex Corp
- EPC
- GaN Systems
- GaNPower
- GaNPower(镓能)
- GOSEMICON
- Grenergy(南京绿芯)
- HXY MOSFET
- Innoscience
- JTM(晶通)
- MACOM
- miracle
- NITRIDE
- NXP Semicon
- PN Junction Semiconductor
- RealChip(正芯半导体)
- Runxin
- Runxin(润新微)
- Tagore Technology
- PackageType
- BGA-4
- BGA-6
- BGA-6(1.3x0.85)
- BGA-9
- BGA-9(1.35x1.35)
- CSP-15
- CSP-6
- DFN(5x6)
- DFN(8x8)
- DFN-10(6x8)
- DFN-16(5x6)
- DFN-3(8x8)
- DFN-3L(5x6)
- DFN-3L(8x8)
- DFN-6L(2x2)
- DFN-8(5x6)
- DFN-8(8x8)
- DFN-8-EP(8x8)
- DFN-8L(5x6)
- DFN-8L(8x8)
- Configuration
- Half Bridge
- 共源
- Continuous Drain Current
- 3.6A
- 10A
- 17A
- 25A
- 34A
- 35A
- 36A
- 46.5A
- 47.2A
- 50A
- 93A
- Continuous Drain Current (Id)
- 500mA
- 1.7A
- 2A
- 3A
- 3.4A
- 5A
- 6.8A
- 7A
- 9.4A
- 9.5A;38A
- 10A
- 10A;40A
- 13A
- 16A
- 17A
- 18A
- 21A
- 22A
- 23A
- 24A
- Drain Source Breakdown Voltage
- 600V
- 650V
- 900V
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 1.3mΩ@40A,5V
- 1.5mΩ@37A,5V
- 1.55mΩ@37A,5V
- 2.2mΩ@29A,5V
- 2.2mΩ@31A,5V
- 2.4mΩ@30A,5V
- 2.5mΩ@29A,5V
- 2.6mΩ@30A,5V
- 3.2mΩ@25A,5V
- 3.2mΩ@30A,5V
- 3.6mΩ@25A,5V
- 3.6mΩ@5V,15A
- 3.8mΩ@25A,5V
- 4mΩ@30A,5V
- 4.4mΩ@20A,5V
- 6mΩ@16A,5V
- 6.3mΩ@20A,5V
- 7mΩ@25A,5V
- 8mΩ@20A,5V
- 8.2mΩ@25A,5V;2.1mΩ@25A,5V
- Drain Source On-State Resistance
- 18mΩ
- 41mΩ
- 60mΩ
- 63mΩ
- 85mΩ
- 100mΩ
- 160mΩ
- Drain Source On-State Resistance(8V)
- 41mΩ
- 62mΩ
- 180mΩ
- 560mΩ
- Drain Source Voltage (Vdss)
- 30V
- 40V
- 60V
- 65V
- 80V
- 100V
- 120V
- 150V
- 170V
- 200V
- 650V
- Gate Threshold Voltage (Vgs(th)@Id)
- 1.4V@1.75mA
- 1.4V@3.5mA
- 1.62V@250uA
- 2.5V@100uA
- 2.5V@11mA
- 2.5V@12mA
- 2.5V@13mA
- 2.5V@14mA
- 2.5V@15mA
- 2.5V@16mA
- 2.5V@18mA
- 2.5V@19mA
- 2.5V@1mA
- 2.5V@2.5mA;2.5V@10mA
- 2.5V@20mA
- 2.5V@250uA
- 2.5V@2mA
- 2.5V@3mA
- 2.5V@3mA;2.5V@12mA
- 2.5V@4mA
- Gate Threshold Voltage
- 1.6V
- 1.7V
- Input Capacitance
- 83pF
- 125pF
- Input Capacitance (Ciss@Vds)
- 10pF@32.5V
- 21pF@32.5V
- 45pF@400V
- 63pF@400V
- 75pF@50V
- 80pF@60V
- 140pF@100V
- 210pF@40V
- 230pF@15V;590pF@15V
- 300pF@30V;1.2nF@30V
- 300pF@40V;1.1nF@40V
- 415pF@50V
- 475pF@15V;1.96nF@15V
- 540pF@100V
- 573pF@100V
- 664pF@50V
- 800pF@50V
- 830pF@30V
- 836pF@85V
- 851pF@50V
- Operating Temperature
- +150℃@(Tj)
- -40℃~+150℃@(Tj)
- -50℃~+150℃
- -55℃~+150℃
- -55℃~+175℃
- Output Capacitance
- 27pF
- Power Dissipation
- 13.2W
- 75W
- 96W
- 113W
- 119W
- 125W
- 150W
- 156W
- 178W
- 187W
- 266W
- Power Dissipation (Pd)
- 83W
- Reverse Transfer Capacitance
- 0.4pF
- 0.5pF
- Reverse Transfer Capacitance (Crss@Vds)
- 0.45pF@400V
- 0.6pF@400V
- Total Gate Charge
- 2.3nC
- 3.3nC
- Total Gate Charge (Qg@Vgs)
- 1.3nC@5V
- 10nC@5V
- 11nC@5V
- 12.2nC@5V
- 13nC@5V
- 14.8nC@5V
- 15nC@5V
- 16.3nC@5V
- 16nC@5V
- 17.7nC@5V
- 17nC@5V
- 18nC@5V
- 19nC@5V
- 2.1nC@6V
- 2.2nC@5V;5.7nC@5V
- 2.4nC@5V
- 2.5nC@5V;10nC@5V
- 2.6nC@6V
- 2.7nC@5V;12nC@5V
- 21nC
- Transistor Type
- 1 N-Channel
- 1PCSNChannel
- Type
- 1PCSNChannel
- 2 N-Channel
- Gallium nitride(GaN)Power transistor
- N沟道
Quantity
-
New look survey 
172 items in total
- 1
- 2
- 3
- 4
- 5
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- 7
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