- Manufacturer
- MFR.Part #
- INN650D260A
- JLCPCB Part #
- C5121645
- Package
- DFN(8x8)
- Description
- -55℃~+150℃ 0.2pF 1.6V 165mΩ@6V 22A 2nC 650V 73pF 75W N-Channel DFN(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | DFN(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 73pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Gate Charge(Qg) | 2nC | |
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 0.2pF | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 165mΩ@6V |
* Images are for reference only
INN650D260A
Extended- Manufacturer
- MFR.Part #
- INN650D260A
- JLCPCB Part #
- C5121645
- Package
- DFN(8x8)
- Description
- -55℃~+150℃ 0.2pF 1.6V 165mΩ@6V 22A 2nC 650V 73pF 75W N-Channel DFN(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- INN650D260A
- JLCPCB Part #
- C5121645
- Package
- DFN(8x8)
- Description
- -55℃~+150℃ 0.2pF 1.6V 165mΩ@6V 22A 2nC 650V 73pF 75W N-Channel DFN(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
INN650D260A Specifications
INN650D260A technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | DFN(8x8) | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 73pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Gate Charge(Qg) | 2nC | |
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 0.2pF | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 165mΩ@6V |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the INN650D260A. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
INN650D260A Documents
INN650D260A datasheets or manufacturer documentation.
Datasheet: INN650D260A Datasheet (PDF)
INN650D260A Schematic Symbol & PCB Footprint
The INN650D260A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.