MGZ18N65
- Manufacturer
- MFR.Part #
- MGZ18N65
- JLCPCB Part #
- C17702019
- Package
- DFN8x8-3L
- Description
- -55℃~+150℃ 13A 150mΩ 1pF 30pF 4V 52W 598pF 650V 8nC E-mode DFN8x8-3L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | miracle | |
| Package | DFN8x8-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 598pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 8nC | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Current - Continuous Drain(Id) | 13A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 52W | |
| RDS(on) | 150mΩ |
* Images are for reference only
MGZ18N65
Extended- Manufacturer
- MFR.Part #
- MGZ18N65
- JLCPCB Part #
- C17702019
- Package
- DFN8x8-3L
- Description
- -55℃~+150℃ 13A 150mΩ 1pF 30pF 4V 52W 598pF 650V 8nC E-mode DFN8x8-3L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
MGZ18N65
Extended- Manufacturer
- MFR.Part #
- MGZ18N65
- JLCPCB Part #
- C17702019
- Package
- DFN8x8-3L
- Description
- -55℃~+150℃ 13A 150mΩ 1pF 30pF 4V 52W 598pF 650V 8nC E-mode DFN8x8-3L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
MGZ18N65 Specifications
MGZ18N65 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | miracle | |
| Package | DFN8x8-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 598pF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 8nC | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Current - Continuous Drain(Id) | 13A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 52W | |
| RDS(on) | 150mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the MGZ18N65. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
MGZ18N65 Documents
MGZ18N65 datasheets or manufacturer documentation.
Datasheet: MGZ18N65 Datasheet (PDF)
MGZ18N65 Schematic Symbol & PCB Footprint
The MGZ18N65 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.