JLCPCB SMT Parts Library & Component Sourcing
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Digital Transistors
(3947)
- Manufacturer
- (DIOTEC)
- amsem
- Analog Devices
- Analog Devices Inc./Maxim Integrated
- BORN
- CBI
- Central Semicon
- Comchip
- Diodes Incorporated
- Doeshare
- Foshan Blue Rocket Elec
- High Diode
- HL(Haolin Elec)
- HUXN
- HXY MOSFET
- Infineon Technologies
- Infineon/Cypress Semicon
- Jiangsu Changjing Electronics Technology Co., Ltd.
- KEC Semicon
- Kodenshi AUK
- PackageType
- CST-3
- CST3
- DFN-3(1.1x1)
- DFN-3(1x0.6)
- DFN-3(1x1)
- DFN-3L(1x0.6)
- DFN1010-3
- DFN1010-6
- DFN1412D-3
- EMT-3
- EMT-5
- EMT-6
- ES6
- ESM
- Mini5-G3-B
- QFN-8
- S-Mini
- S-MiNi
- SC-101(SOT-883)
- SC-105AA
- Collector Current (Ic)
- 20mA
- 30mA
- 30mA;100mA
- 50mA
- 60mA
- 70mA
- 70mA;100mA
- 80mA
- 0.1A
- 100mA
- 100mA;1.8A
- 100mA;150mA
- 100mA;200mA
- 100mA;500mA
- 150mA
- 200mA
- 400mA
- 500mA
- 500mA;100mA
- 600mA
- Collector Cut-Off Current (Icbo)
- 500nA
- Collector-Emitter Breakdown Voltage (Vceo)
- 12V
- 15V
- 15V;50V
- 20V
- 20V;50V
- 30V
- 40V
- 40V;30V
- 40V;50V
- 50V
- 50V;12V
- 50V;15V
- 50V;30V
- 50V;40V
- 50V;60V
- 60V
- 60V;50V
- 70V
- 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
- 300mV@500uA,10mA
- 300mV@50mA,2.5mA
- 300mV@5mA,250uA
- 300mV@5mA,500uA
- DC Current Gain (hFE@Ic,Vce)
- 1000@1A,5V
- 100@10mA,10V
- 100@10mA,1V;100@150mA,5V
- 100@10mA,5V
- 100@10uA,5V
- 100@1A,5V
- 100@1mA,5V
- 100@1mA,5V;68@100mA,5V
- 100@1mA,5V;82@50mA,5V
- 100@500mA,2V
- 100@50mA,5V
- 100@5mA,10V
- 100@5mA,5V
- 115@100mA,2V
- 120@10mA,5V
- 120@1mA,5V
- 120@5mA,10V
- 120@5mA,5V
- 125@800mA,1V
- 130@300mA,5V
- Input Resistor
- 1kΩ
- 2.2kΩ
- 2.86kΩ
- 4.7kΩ
- 6.1kΩ
- 10kΩ
- 13kΩ
- 22kΩ
- 28.6kΩ
- 47kΩ
- 100kΩ
- Input Voltage (VI(off)@Ic,Vce)
- 300mV@100uA,5V
- 500mV@0.1mA,5V
- 500mV@100uA,5V
- 600mV@100uA,5V
- 650mV@100uA,5V
- 0.7V@100uA,5.0V
- 700mV@100uA,5V
- 750mV@100uA,5V
- 800mV@100uA,5V
- 900mV@100uA,5V
- 1V
- 1V@0.1mA,5V
- 1V@100uA,5V
- 1.1V@100uA,5V
- 1.2V@100uA,5V
- 1.2V@1mA,5V
- 1.7V@100uA,5V
- Input Voltage (VI(on)@Ic,Vce)
- 500mV@2mA,300mV
- 700mV@5mA,200mV
- 750mV@5mA,0.3V
- 800mV@10mA,0.3V
- 800mV@1mA,0.3V
- 800mV@20mA,0.3V
- 900mV@5mA,0.3V
- 1V@20mA,0.3V
- 1.1V@2mA,0.3V
- 1.1V@5mA,03V
- 1.25V@20mA,0.3V
- 1.3V@2mA,0.3V
- 1.3V@5mA,0.2V
- 1.3V@5mA,0.3V
- 1.3V@5mA,300mV
- 1.4V@1.0mA,0.2V
- 1.4V@10mA,0.3V
- 1.4V@1mA,0.3V
- 1.4V@1mA,300mV
- 1.4V@20mA,500mA
- Operating Temperature
- +150℃@(Tj)
- -50℃~+150℃@(Tj)
- -55℃~+150℃
- -55℃~+150℃@(Tj)
- Output Voltage (VO(on)@Io/Ii)
- 70mV@5mA,500uA
- 100mV@10mA,0.25mA
- 100mV@10mA,500uA
- 100mV@5mA,0.25mA
- 100mV@5mA,2.5mA
- 100mV@5mA,250uA
- 200mV
- 300mV
- 300mV@10mA,0.5mA
- 300mV@10mA,500uA
- 300mV@50mA,2.5mA
- 300mV@5mA,0.25mA
- Power Dissipation (Pd)
- 100mW
- 120mW
- 125mW
- 0.15W
- 150mW
- 150mW;120mW
- 180mW
- 187mW
- 0.2W
- 200mW
- 202mW
- 230mW
- 235mW
- 246mW
- 250mW
- 254mW
- 256mW
- 260mW
- 270mW
- 280mW
- Resistor Ratio
- 0.047
- 0.056
- 0.185
- 0.213
- 0.47
- 1.2
- 2.1
- 2.13
- 4.5
- 4.7
- 1
- 10
- 21
- Transistor Type
- 1 NPN - bias preset
- 1 NPN - Pre Biased
- 1 NPN - pre-bias, 1 PNP
- 1 NPN - Pre-Biased + Diode
- 1 NPN - Pre-Biased,1 PNP
- 1 NPN - Pre-Biased,1 PNP - Pre-Biased
- 1 NPN, 1 PNP-Pre-Biased
- 1 NPN,1 PNP - Pre-Biased
- 1 NPN-prebias, 1 NPN
- 1 PNP pre-bias
- 1 PNP-Prebiased + Diode
- 1PCSNPN-预偏置,1PCSNPN
- 1PCSNPN-预偏置,1PCSPNP-预偏置(基集电极结)
- 1PCSPNP-预偏置,1PCSNPN
- 2 NPN - Pre-Biased
- 2 NPN - pre-biased (emitter coupled)
- 2 NPN-Pre-Biased
- 2 PNP - pre-bias
- 2 PNP - pre-bias (emitter-coupled)
- 2 PNP - Pre-Biased
- Transition Frequency (fT)
- 200MHz
- 250MHz
Quantity
-
New look survey 
3947 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 158
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