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  • GaN Transistors(GaN HEMT)

    (4)
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  • Manufacturer
    • Ampleon
    • BeRex Corp
    • EPC
    • GaN Systems
    • GaNPower
    • GOSEMICON
    • Grenergy
    • HTCSEMI
    • HXY MOSFET
    • Infineon Technologies
  • PackageType
    • BGA-15(2.2x1.3)
    • BGA-30(6.1x2.3)
    • BGA-4
    • BGA-6
    • BGA-6(1.3x0.85)
    • BGA-9
    • BGA-9(1.35x1.35)
    • BGA-9(1.4x1.4)
    • CSP-15
    • CSP-9
  • Ciss-Input Capacitance
    • 4.5pF
    • 7pF
    • 7pF、21pF、21pF
    • 7pF、26pF
    • 14pF
    • 20pF
    • 26pF
    • 28pF
    • 34pF
    • 42pF
  • Current - Continuous Drain(Id)
    • 0.5A
    • 0.5A、1.7A、1.7A
    • 0.6A
    • 1.2A
    • 1.5A
    • 1.7A
    • 2A
    • 3A
    • 3.4A
    • 3.5A
  • Current - Output High(IOH)
    • 8mA
  • Current - Output Low(IOL)
    • 8mA
    • 77.6A
  • Drain to Source Voltage
    • 15V
    • 30V
    • 30V、30V
    • 40V
    • 60V
    • 60V、60V
    • 65V
    • 72V
    • 80V
    • 80V、80V
  • Driven Configuration
    • Half-Bridge
  • Fall Time
    • 2.9ns
    • 21ns
    • 4.2ns
  • Features
    • Over Current Protection、Over-temperature protection
    • Over Current Protection、Overheat protection
  • Gate Charge(Qg)
    • 0.75nC
    • 0.85nC
    • 0.87nC
    • 0.8nC
    • 0.8nC、1.5nC
    • 0.9nC
    • 1.26nC
    • 1.2nC
    • 1.2nC、1.2nC
    • 1.35nC
  • Gate Threshold Voltage (Vgs(th))
    • -1.9V
    • 1V
    • 1.1V
    • 1.2V
    • 1.3V
    • 1.3V、1.3V
    • 1.4V
    • 1.45V
    • 1.5V
    • 1.6V
  • Load Type
    • MOSFET
  • Number
    • 1 N-channel
    • 1 N-channel + 1 N-channel
    • 2 N-Channel
    • 3 N-channels
  • Operating Temperature
    • -40℃~+105℃
    • -40℃~+125℃
    • -40℃~+150℃
    • -40℃~+85℃
    • -50℃~+150℃
    • -55℃~+150℃
    • -55℃~+175℃
  • Output Capacitance(Coss)
    • 1.3pF
    • 1.6pF
    • 1.6pF、12pF、16pF
    • 1.6pF、9.2pF、14pF
    • 2pF
    • 6.5pF
    • 6.7pF
    • 7pF
    • 7pF、14.2pF
    • 9pF
  • Pd - Power Dissipation
    • 1.1W、2W、3W、33W
    • 4W
    • 7.5W
    • 13W
    • 13.2W
    • 15W
    • 18W
    • 21W
    • 21.6W
    • 23W
  • RDS(on)
    • 0.8mΩ
    • 0.9mΩ
    • 1.15mΩ
    • 1.2mΩ
    • 1.3mΩ
    • 1.4mΩ
    • 1.5mΩ
    • 1.6mΩ
    • 1.7mΩ
    • 1.8mΩ
  • Reverse Transfer Capacitance (Crss)
    • 0.013pF
    • 0.02pF
    • 0.02pF、0.2pF、0.2pF
    • 0.02pF、0.4pF
    • 0.1pF
    • 0.12pF
    • 0.13pF
    • 0.16pF
    • 0.17pF
    • 0.186pF
  • Technology
    • D-mode
    • E-mode
  • Type
    • 1 N-channel
    • N-Channel
  • Voltage - Supply
    • 7.5V~18V
    • 9.5V~18V
Results remaining: 404
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