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  • GaN Transistors(GaN HEMT)

    (374)
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  • Manufacturer
    • Ampleon
    • BeRex Corp
    • EPC
    • GaN Systems
    • GaNPower
    • GOSEMICON
    • Grenergy
    • HTCSEMI
    • HXY MOSFET
    • Infineon Technologies
  • PackageType
    • BGA-4
    • BGA-6
    • BGA-6(1.3x0.85)
    • BGA-9
    • BGA-9(1.35x1.35)
    • BGA75
    • CSP-15
    • CSP-9
    • CSP-9_1.35X1.35X0.45P
    • DFN(8x8)
  • Ciss-Input Capacitance
    • 34pF
    • 42pF
    • 46pF
    • 68pF
    • 70pF
    • 73pF
    • 79pF
    • 83pF
    • 90pF
    • 96pF
  • Current - Continuous Drain(Id)
    • 3.5A
    • 3.6A
    • 4.8A
    • 6.5A
    • 7A
    • 7.9A
    • 8A
    • 8.2A
    • 9.3A
    • 10A
  • Current - Output High(IOH)
    • 8mA
  • Current - Output Low(IOL)
    • 8mA
    • 77.6A
  • Drain to Source Voltage
    • 30V
    • 40V
    • 100V
    • 150V
    • 600V
    • 650V
    • 700V
    • 725V
    • 900V
    • 1200V
  • Driven Configuration
    • Half-Bridge
  • Fall Time
    • 2.9ns
    • 21ns
    • 22ns
    • 3ns
    • 4.2ns
    • 70ns
  • Features
    • Over Current Protection、Over Temperature Protection
    • Over Temperature Protection
  • Gate Charge(Qg)
    • 0.9nC
    • 1.2nC
    • 1.35nC
    • 1.5nC
    • 1.6nC
    • 1.8nC
    • 1.9nC
    • 10nC
    • 12nC@5V
    • 13nC
  • Gate Threshold Voltage (Vgs(th))
    • 1.1V
    • 1.2V
    • 1.4V
    • 1.5V
    • 1.6V
    • 1.6V@0.53mA
    • 1.6V@0.96mA
    • 1.6V@690uA
    • 1.7V
    • 1.9V
  • Input Capacitance(Ciss)
    • 87.7pF
    • 96pF
    • 110pF
    • 125pF
    • 157pF
    • 225pF
    • 865pF@85V
    • 1nF
    • 1nF@400V
    • 1.5nF@400V
  • Load Type
    • MOSFET
  • Number
    • 1 N-channel
  • Operating Temperature
    • -40℃~+125℃
    • -40℃~+150℃
    • -50℃~+150℃
    • -55℃~+150℃
    • -55℃~+175℃
    • -55℃~+175℃@(Tj)
  • Output Capacitance(Coss)
    • 9.2pF
    • 11pF
    • 13pF
    • 17pF
    • 18pF
    • 20pF
    • 22pF
    • 25pF
    • 27pF
    • 28pF
  • Pd - Power Dissipation
    • 13W
    • 13.2W
    • 21W
    • 21.6W
    • 25W
    • 27W
    • 28W
    • 32W
    • 33W
    • 38W
  • RDS(on)
    • 0.9mΩ
    • 1.2mΩ
    • 1.4mΩ
    • 2.5mΩ
    • 3.2mΩ
    • 3.2mΩ@5V
    • 4mΩ
    • 18mΩ@10V
    • 25mΩ
    • 35mΩ
  • Reverse Transfer Capacitance (Crss)
    • 0.13pF
    • 0.2pF
    • 0.26pF
    • 0.3pF
    • 0.31pF
    • 0.4pF
    • 0.5pF
    • 0.7pF
    • 0.8pF
    • 0.94pF
  • Reverse Transfer Capacitance (Crss@Vds)
    • 250fF
    • 0.21pF
    • 0.36pF
    • 0.4pF
    • 0.5pF
    • 2.5pF@85V
    • 5pF@400V
    • 8pF@400V
    • 8.2pF
  • Rise Time
    • 2.8ns
  • Technology
    • E-mode
  • Type
    • 1 N-channel
    • N-Channel
  • Voltage - Supply
    • 4.75V~9.5V
    • 7.5V~18V
    • 9.5V~18V
    • 10V~24V
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