JLCPCB SMT Parts Library & Component Sourcing
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Memory
(42184)
Memory provides users with convenient, secure, and sufficiently large storage space. It is widely used in the manufacturing, construction, electrical, industrial, and electronic equipment fields. Memory from international brands Maxim Integrated, Texas Instruments, and Microchip Tech are available at JLCPCB for assembly.
- DDR (2)
- DDR SDRAM (978)
- DRAM (422)
- EEPROM (10205)
- EMMC (269)
- FLASH (16)
- Font Chips (37)
- FRAM (525)
- Global Sourcing Parts (1)
- Memory - Configuration Proms For FPGAs (103)
- Memory - Serial MCP (Multi Chip Package) (54)
- Memory Controllers (33)
- NAND FLASH (2027)
- Non-Volatile Memory (ROM) (923)
- NOR FLASH (9768)
- RAM (1)
- Random Access Memory (RAM) (431)
- SDRAM (4410)
- SRAM (11978)
- Manufacturer
- ABLIC
- Adafruit Industries
- Adesto Technologies
- AIRPAX
- Alliance Memory
- Alliance Semicon
- Altera
- AMD(Advanced Micro Devices)
- AMD/XILINX
- AMI SEMICONDUCTOR
- Ampleon
- Analog Devices
- Analog Devices Inc./Maxim Integrated
- AP Memory
- Apmemory
- Asahi Kasei Microdevices
- ATO SOLUTION Co ., LTD
- ATP Electronics, Inc.
- BL(Shanghai Belling)
- BOYAMICRO
- PackageType
- 100-CABGA (6x6)
- 100-LQFP (14x20)
- 100-TQFP
- 100-TQFP (14x14)
- 100-TQFP (14x20)
- 102-VFBGA (9x14)
- 11.5x13x0.8mm
- 119-PBGA (14x22)
- 121-FBGA (6.5x8)
- 128-TQFP (14x20)
- 132-PQFP (24.13x24.13)
- 134-FBGA (10x11.5)
- 134-FBGA (11x11.5)
- 134-VFBGA (10x11.5)
- 144-BGA
- 144-FBGA (11x18.5)
- 144-MiniBGA (12x12)
- 152-VFBGA (14x14)
- 15x11x1.0mm
- 165-CABGA (13x15)
- Block Erase Time (tBE)
- 0.8s
- 10ms
- 10ms@(32KB)
- 120ms
- 120ms@(32KB)
- 12ms
- 150ms;0.3s;0.4s
- 150ms@(64KB)
- 1ms
- 2.5ms
- 200ms@(64KB)
- 250ms@(64KB)
- 25ms
- 2ms
- 3.5ms
- 300ms
- 350ms@(64KB)
- 3ms
- 400ms
- 400ms@(64KB)
- Character Set
- ASCII,GBK
- ASCII,GBK,GB18030,拉丁文
- ASCII,GBK,拉丁文
- BIG5,GB18030,GB2312,UNICODE
- BIG5,GB2312,JIS0208,KSC5601,UNICODE
- BIG5,GB2312,UNICODE
- Codepage,GB2312,UNICODE,ISO8859
- Codepage,UNICODE,ISO8859
- GB18030
- GB18030,ASCII,拉丁文
- GB18030,BIG5,UNICODE
- GB18030,KSC5601,JIS0208,UNICODE
- GB18030,UNICODE
- GB18030,UNICODE,CODEPAGE,条形码
- GB2312
- GB2312,BIG5,JIS0208,KSC5601,UNICODE
- GB2312,UNICODE
- GBK,GT
- GBK,JIS0208,KSC5601,UNICODE
- GBK,UNICODE
- Clock Frequency (fc)
- 4kHz~1MHz
- 100kHz
- 100kHz~1MHz
- 100kHz~400kHz
- 125kHz
- 400kHz
- 400kHz~1000kHz
- 400kHz~1MHz
- 1000kHz
- 1MHz
- 2MHz
- 2MHz~16MHz
- 3MHz
- 3.4MHz
- 4MHz
- 5MHz
- 10MHz
- 13.56MHz
- 16MHz
- 20MHz
- Clock Frequency(Max)
- 104MHz
- 166MHz
- Clock Rate
- 30MHz
- 45MHz
- 50MHz
- 60MHz
- 80MHz
- 108MHz
- 120MHz
- Controller Type
- DDR SDRAM
- DRAM
- NAND FLASH-USB
- Power Monitor
- Data Retention - TDR (Year)
- 100 years
- 20 Years
- 20年
- 40 Years
- Dot Pitch
- 12x12,16x16
- 12x12,16x16,24x24
- 12x12,16x16,24x24,32x32
- 16x16
- 16x16,24x24
- 16~192
- 16~192(矢量汉字)
- 24x24
- 5x7~16
- 5x7~24
- 9x17,12x24,24x24
- Interface Type
- eMMC 5.1
- I/O
- I2C
- I2C;Single Bus
- JTAG
- Parallel Port
- SD2.0
- SD3.0
- Single Bus
- SPI
- SRAM-type
- UFS
- UFS2.1
- UFS2.2
- 并口
- 并口(Parallel)
- Memory Format
- DRAM
- EPROM
- MRAM
- OTP EPROM
- RLDRAM
- SDRAM DDR
- SDRAM DDR2
- SDRAM DDR3
- SDRAM DDR3L
- SDRAM DDR4
- Memory Size
- 1.125Mbit
- 1.152Mbit
- 1.25Kbit
- 1.5Kbit
- 1024Kbit
- 128bit
- 128Gbit
- 128Kb (16K x 8)
- 128Kbit
- 128Mb (128M x 1, 64M x 2, 32M x 4)
- 128Mb (16M x 8)
- 128Mbit
- 144Kbit
- 144Mbit
- 160Gbit
- 16Gbit
- 16Kb (2K x 8)
- 16Kbit
- 16Mb (1M x 16)
- 16Mb (2M x 8)
- Operating Current
- 5mA~15mA
- 8mA
- 12mA
- Operating Temperature
- -20℃~+125℃
- -20℃~+70℃
- -20℃~+85℃
- -20℃~85℃
- -25℃~+70℃
- -25℃~+85℃
- -30℃~+85℃
- -40℃~+105℃
- -40℃~+125℃
- -40℃~+145℃
- -40℃~+150℃
- -40℃~+80℃
- -40℃~+85℃
- -40℃~+95℃
- -40℃~105℃
- -40℃~125℃
- -40℃~145℃
- -40℃~150℃
- -40℃~85℃
- -55℃~+125℃
- Operating Temperature Range
- -40℃~+85℃
- Operating Voltage Range
- 2.7V~3.6V
- Page Program time (Tprog)
- 0.35ms
- 200us
- 220us
- 250us
- 300us
- 360us
- 700us
- Page Programming Time (Tpp)
- 0.4ms
- 0.5ms
- 0.6ms
- 1.25ms
- 1.2ms
- 1.3ms
- 1.5ms
- 1.6ms
- 1.75ms
- 1.7ms
- 1.8ms
- 100ns
- 110ns
- 120ns
- 12ms;3ms
- 1ms
- 2.4ms
- 2.5ms
- 2.75ms
- 200us
- Refresh Current
- 230uA
- 530uA
- 2mA
- 3mA
- 4mA
- 10mA
- 11mA
- 13mA
- 20mA
- 22mA
- Sequential Read/Write (MB/s)
- 280/30 MB/s
- Sleep mode current (Izz)
- 2uA
- 3uA
- 5uA
- 12uA
- Standby Current
- 1uA~5uA
- 2uA~13uA
- 5uA
- 8uA
- 10uA
- Standby supply current
- 1uA
- 2uA
- 8uA
- 12uA
- 20uA
- 100uA
- 200uA
- Standby supply current (Isb)
- 100nA
- 3uA
- 5uA
- 10uA
- 20uA
- 45uA
- 90uA
- 100uA
- Supply Current
- 70uA
- 1mA
- 1.4mA
- 1.5mA
- 2.3mA
- 3mA
- 10mA
- 12mA
- Supply Current (Erase)
- 5mA
- 15mA
- 20mA
- 30mA
- Supply Current (Program)
- 5mA
- 9mA
- 15mA
- 20mA
- 30mA
- Supply Current (Read)
- 0.4mA
- 0.5mA
- 1mA
- 2mA
- 2.8mA
- 12mA
- 14mA
- 15mA
- 20mA
- 25mA
- 30mA
- Supply Current (Write)
- 0.5mA
- 2mA
- 5mA
- Supply Voltage
- 1V~2.6V
- 1.06V~1.95V
- 1.14V~1.26V
- 1.2V
- 1.28V~1.42V
- 1.28V~1.45V
- 1.283V~1.45V
- 1.35V
- 1.35V~1.5V
- 1.5V
- 1.5V~3.6V
- 1.6V~3.6V
- 1.6V~5.5V
- 1.65V~1.95V
- 1.65V~1.9V
- 1.65V~2.1V
- 1.65V~2.2V
- 1.65V~2.75V
- 1.65V~2V
- 1.65V~3.6V
- Supply current
- 3.5mA
- 29mA
- 35mA
- 40mA
- 47mA
- 50mA
- 56mA
- 60mA
- 80mA
- 85mA
- 90mA
- 100mA
- 115mA
- 130mA
- 170mA
- Supply current (Ipp)
- 20uA
- Type
- NAND Flash
- NOR Flash
- Write Cycle Endurance
- 1,000,000 Times
- 100000 Times
- 1000000 times
- 200,000 Times
- 200000 Times
- 4,000,000 Times
- 500000 Times
- Write Cycle Time (Tw)
- 1.5ms
- 1.9ms
- 100ns
- 10ms
- 1ms
- 20ns
- 25ns
- 2ms
- 30ns
- 3ms
- 45ns
- 4ms
- 5ms
- 6ms
- 70ns
- Write Cycle Time (tWC)
- 20ns
- 250us
- 25ns
- 35ns
- 45ns
- 600us
- 700us
- 70us
- configuration
- TLC
- upply Voltage (Vcc)
- 1.42V~1.58V;1.7V~1.9V
- 1.65V~1.98V
- 1.65V~2.25V
- 1.65V~2.2V
- 1.65V~3.6V
- 1.7V~1.95V
- 1.7V~1.9V
- 1.7V~1.9V;2.4V~2.6V;2.7V~3.3V
- 1.7V~2.2V
- 1.7V~3.6V
- 1.71V~1.89V
- 1.8V~2.2V
- 1.8V~3.3V
- 2V~3.6V
- 2V~5.5V
- 2.2V~3.6V
- 2.2V~3.6V;4.5V~5.5V
- 2.2V~3.7V
- 2.2V~5.5V
- 2.3V~2.6V
Quantity
-
New look survey 
42184 items in total
- 1
- 2
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- 4
- 5
- 6
- 1688
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