JLCPCB SMT Parts Library & Component Sourcing
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Memory
(42733)- DDR SDRAM (1005)
- DRAM (424)
- EEPROM (10296)
- eMMC (283)
- Font chips (38)
- FRAM (554)
- Memory - Configuration Proms for FPGAs (104)
- Memory - Serial MCP (Multi Chip Package) (57)
- Memory Controllers (35)
- NAND FLASH (2056)
- Non-Volatile Memory (ROM) (942)
- NOR FLASH (9923)
- PSRAM (1)
- Random Access Memory (RAM) (443)
- SDRAM (4436)
- SRAM (12136)
- Manufacturer
- "ALLIANCE MEMORY, INC."
- ABLIC
- Adafruit Industries
- Adesto Technologies
- ADI(亚德诺)
- AIRPAX
- ALLIANCE
- ALLIANCE MEMORY
- Alliance Memory
- ALLIANCE MEMORY INC
- ALLIANCE MEMORY, INC.
- Alliance Semicon
- Altera
- AMD(Advanced Micro Devices)
- AMD/XILINX
- AMD/XILINX(赛灵思)
- AMI SEMICONDUCTOR
- Ampleon
- Analog Devices
- Analog Devices Inc./Maxim Integrated
- PackageType
- 100-CABGA (6x6)
- 100-LQFP (14x20)
- 100-TQFP
- 100-TQFP (14x14)
- 100-TQFP (14x20)
- 102-VFBGA (9x14)
- 11.5x13x0.8mm
- 119-PBGA (14x22)
- 121-FBGA (6.5x8)
- 128-TQFP (14x20)
- 132-PQFP (24.13x24.13)
- 134-FBGA (10x11.5)
- 134-FBGA (11x11.5)
- 134-VFBGA (10x11.5)
- 144-BGA
- 144-FBGA (11x18.5)
- 144-MiniBGA (12x12)
- 152-VFBGA (14x14)
- 15x11x1.0mm
- 16-PinSOP
- Block Erase Time (tBE)
- 0.8s
- 10ms
- 10ms@(32KB)
- 120ms
- 120ms@(32KB)
- 12ms
- 150ms;0.3s;0.4s
- 150ms@(64KB)
- 1ms
- 2.5ms
- 2000ms@(64KB)
- 200ms@(64KB)
- 225ms@(32KB)
- 250ms@(64KB)
- 25ms
- 2ms
- 3.5ms
- 300ms
- 350ms@(64KB)
- 3ms
- Character Set
- ASCII,GBK
- ASCII,GBK,GB18030,拉丁文
- ASCII,GBK,拉丁文
- BIG5,GB18030,GB2312,UNICODE
- BIG5,GB2312,JIS0208,KSC5601,UNICODE
- BIG5,GB2312,UNICODE
- Codepage,GB2312,UNICODE,ISO8859
- Codepage,UNICODE,ISO8859
- GB18030
- GB18030,ASCII,拉丁文
- GB18030,BIG5,UNICODE
- GB18030,KSC5601,JIS0208,UNICODE
- GB18030,UNICODE
- GB18030,UNICODE,CODEPAGE,条形码
- GB2312
- GB2312,BIG5,JIS0208,KSC5601,UNICODE
- GB2312,UNICODE
- GBK,GT
- GBK,JIS0208,KSC5601,UNICODE
- GBK,UNICODE
- Clock Frequency (fc)
- 4kHz~1MHz
- 100kHz
- 100kHz~1MHz
- 100kHz~400kHz
- 125kHz
- 400kHz
- 400kHz~1000kHz
- 400kHz~1MHz
- 1000kHz
- 1MHz
- 2MHz
- 2MHz~16MHz
- 3MHz
- 3.4MHz
- 4MHz
- 5MHz
- 10MHz
- 13.56MHz
- 16MHz
- 20MHz
- Clock Frequency(Max)
- 104MHz
- 166MHz
- Clock Rate
- 30MHz
- 45MHz
- 50MHz
- 60MHz
- 80MHz
- 108MHz
- 120MHz
- Controller Type
- DDR SDRAM
- DRAM
- NAND FLASH-USB
- Power Monitor
- Data Retention - TDR (Year)
- 100 years
- 20 Years
- 20年
- 40 Years
- Dot Pitch
- 12x12,16x16
- 12x12,16x16,24x24
- 12x12,16x16,24x24,32x32
- 16x16
- 16x16,24x24
- 16~192
- 16~192(矢量汉字)
- 24x24
- 5x7~16
- 5x7~24
- 9x17,12x24,24x24
- Interface Type
- eMMC 5.1
- I/O
- I2C
- I2C;Single Bus
- JTAG
- Parallel Port
- SD2.0
- SD3.0
- Single Bus
- SPI
- SRAM-type
- UFS
- UFS2.1
- UFS2.2
- 并口
- 并口(Parallel)
- Memory Format
- DRAM
- EPROM
- MRAM
- OTP EPROM
- RLDRAM
- SDRAM DDR
- SDRAM DDR2
- SDRAM DDR3
- SDRAM DDR3L
- SDRAM DDR4
- Memory Size
- 1.125Mbit
- 1.152Mbit
- 1.25Kbit
- 1.5Kbit
- 1024Kbit
- 128bit
- 128Gbit
- 128Kb (16K x 8)
- 128Kbit
- 128Mb (128M x 1, 64M x 2, 32M x 4)
- 128Mb (16M x 8)
- 128Mbit
- 144Kbit
- 144Mbit
- 160Gbit
- 16Gbit
- 16Kb (2K x 8)
- 16Kbit
- 16Mb (1M x 16)
- 16Mb (2M x 8)
- Operating Current
- 5mA~15mA
- 8mA
- 12mA
- Operating Temperature
- -20℃~+125℃
- -20℃~+70℃
- -20℃~+85℃
- -20℃~85℃
- -25℃~+70℃
- -25℃~+85℃
- -30℃~+85℃
- -40℃~+105℃
- -40℃~+125℃
- -40℃~+145℃
- -40℃~+150℃
- -40℃~+80℃
- -40℃~+85℃
- -40℃~+95℃
- -40℃~105℃
- -40℃~125℃
- -40℃~145℃
- -40℃~150℃
- -40℃~85℃
- -55℃~+125℃
- Operating Temperature Range
- -40℃~+85℃
- Operating Voltage Range
- 2.7V~3.6V
- Page Program time (TPP)
- 330us
- Page Program time (Tprog)
- 0.35ms
- 0.36ms
- 200us
- 220us
- 250us
- 300us
- 360us
- 700us
- Page Programming Time (Tpp)
- 0.4ms
- 0.5ms
- 0.6ms
- 1.25ms
- 1.2ms
- 1.3ms
- 1.5ms
- 1.6ms
- 1.75ms
- 1.7ms
- 1.8ms
- 100ns
- 110ns
- 120ns
- 12ms;3ms
- 1ms
- 2.4ms
- 2.5ms
- 2.75ms
- 200us
- Refresh Current
- 230uA
- 530uA
- 2mA
- 3mA
- 4mA
- 10mA
- 11mA
- 13mA
- 20mA
- 22mA
- Sequential Read/Write (MB/s)
- 280/30 MB/s
- Sleep mode current (Izz)
- 2uA
- 3uA
- 5uA
- 12uA
- Standby Current
- 1uA~5uA
- 2uA~13uA
- 5uA
- 8uA
- 10uA
- Standby supply current
- 1uA
- 2uA
- 8uA
- 12uA
- 20uA
- 100uA
- 200uA
- Standby supply current (Isb)
- 100nA
- 3uA
- 5uA
- 10uA
- 20uA
- 45uA
- 90uA
- 100uA
- Supply Current
- 70uA
- 1mA
- 1.4mA
- 1.5mA
- 2.3mA
- 3mA
- 10mA
- 12mA
- Supply Current (Erase)
- 5mA
- 15mA
- 20mA
- 30mA
- Supply Current (Program)
- 5mA
- 9mA
- 15mA
- 20mA
- 30mA
- Supply Current (Read)
- 0.4mA
- 0.5mA
- 1mA
- 2mA
- 2.8mA
- 12mA
- 14mA
- 15mA
- 20mA
- 25mA
- 30mA
- Supply Current (Write)
- 0.5mA
- 2mA
- 5mA
- Supply Voltage
- 1V~2.6V
- 1.06V~1.95V
- 1.14V~1.26V
- 1.2V
- 1.28V~1.42V
- 1.28V~1.45V
- 1.283V~1.45V
- 1.35V
- 1.35V~1.5V
- 1.5V
- 1.5V~3.6V
- 1.6V~3.6V
- 1.6V~5.5V
- 1.65V~1.95V
- 1.65V~1.9V
- 1.65V~2.1V
- 1.65V~2.2V
- 1.65V~2.75V
- 1.65V~2V
- 1.65V~3.6V
- Supply current
- 3.5mA
- 29mA
- 35mA
- 40mA
- 47mA
- 50mA
- 56mA
- 60mA
- 80mA
- 85mA
- 90mA
- 100mA
- 115mA
- 130mA
- 170mA
- Supply current (Ipp)
- 20uA
- Type
- NAND Flash
- NOR Flash
- Write Cycle Endurance
- 1,000,000 Times
- 100000 Times
- 1000000 times
- 200,000 Times
- 200000 Times
- 4,000,000 Times
- 500000 Times
- 900,000 times
- Write Cycle Time (TWC)
- 25ns
- Write Cycle Time (Tw)
- 1.5ms
- 1.9ms
- 100ns
- 10ms
- 1ms
- 20ns
- 25ns
- 2ms
- 30ns
- 3ms
- 45ns
- 4ms
- 5ms
- 6ms
- 70ns
- Write Cycle Time (tWC)
- 20ns
- 250us
- 25ns
- 35ns
- 45ns
- 600us
- 700us
- 70us
- configuration
- TLC
- upply Voltage (Vcc)
- 1.42V~1.58V;1.7V~1.9V
- 1.65V~1.98V
- 1.65V~2.25V
- 1.65V~2.2V
- 1.65V~3.6V
- 1.7V~1.95V
- 1.7V~1.9V
- 1.7V~1.9V;2.4V~2.6V;2.7V~3.3V
- 1.7V~2.2V
- 1.7V~3.6V
- 1.71V~1.89V
- 1.8V~2.2V
- 1.8V~3.3V
- 2V~3.6V
- 2V~5.5V
- 2.2V~3.6V
- 2.2V~3.6V;4.5V~5.5V
- 2.2V~3.7V
- 2.2V~5.5V
- 2.3V~2.6V
Quantity
-
New look survey 
42733 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 1710
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