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  • Thyristors (SCR)/Modules

    (5542)
  • Manufacturer
    • ALJ
    • Bencent
    • BORN
    • Brightking
    • CBI
    • Central Semicon
    • Collective Semiconductor Technology
    • Diodes Incorporated
    • DIYI Elec Tech
    • Doeshare
    • FUXINSEMI
    • Galco Industrial Electronics
    • GOODWORK
    • HARRIS
    • HTCSEMI
    • HXY MOSFET
    • Infineon Technologies
    • ISC
    • Jiangsu Changjing Electronics Technology Co., Ltd.
    • Jiangsu JieJie Microelectronics
  • PackageType
    • BESOP-15
    • BG-PB34SB-1
    • BG-PB50SB-1
    • BG-SB20-1
    • D2PAK
    • D2PAK(TO-263-3)
    • DO-15
    • DO-200AA
    • DO-214
    • DO-214-3L
    • DO-2143L
    • DPAK
    • I2PAK
    • IPAK
    • IPAK(TO-251)
    • ISO-247
    • ITO-220AB
    • ITO-220AB-3
    • ITO-247
    • KAMM
  • Average Gate Power Dissipation (PG(AV))
    • 100mW
    • 200mW
    • 300mW
    • 500mW
    • 1W
    • 1.5W
    • 2W
    • 5W
    • 10W
  • Gate Trigger Voltage (Vgt)
    • 600mV
    • 620mV
    • 750mV
    • 800mV
    • 900mV
    • 1V
    • 1.1V
    • 1.2V
    • 1.3V
    • 1.4V
    • 1.5V
    • 1.6V
    • 1.7V
    • 1.8V
    • 2V
    • 2.2V
    • 2.5V
    • 3V
    • 3.2V
    • 3.5V
  • Gate Trigger Current(Igt)
    • 1uA
    • 5uA
    • 6uA
    • 10uA
    • 12uA
    • 15uA
    • 20uA
    • 25uA
    • 30uA
    • 50uA
    • 60uA
    • 75uA
    • 90uA
    • 100uA
    • 150uA
    • 200uA
    • 500uA
    • 1mA
    • 1.5mA
    • 3mA
  • Holding Current (Ih)
    • 500uA
    • 1mA
    • 1.5mA
    • 1.55mA
    • 2mA
    • 2.5mA
    • 3mA
    • 4mA
    • 5mA
    • 6mA
    • 7mA
    • 8mA
    • 10mA
    • 12mA
    • 15mA
    • 20mA
    • 22mA
    • 25mA
    • 30mA
    • 35mA
  • Operating Temperature
    • -10℃~+125℃@(Tj)
    • -10℃~+70℃
    • -10℃~+70℃@(Tj)
    • -25℃~+125℃
    • -25℃~+125℃@(Tj)
    • -30℃~+125℃
    • -30℃~+125℃@(Tj)
    • -30℃~+150℃
    • -40℃~+100℃
    • -40℃~+105℃
    • -40℃~+110℃
    • -40℃~+110℃@(Tj)
    • -40℃~+120℃
    • -40℃~+125℃
    • -40℃~+125℃@(Tc)
    • -40℃~+125℃@(Tj)
    • -40℃~+130℃
    • -40℃~+130℃@(Tj)
    • -40℃~+135℃
    • -40℃~+140℃
  • Peak Forward On?State Voltage (Vtm)
    • 1.14V
    • 1.15V
    • 1.2V
    • 1.23V
    • 1.25V
    • 1.28V
    • 1.3V
    • 1.32V
    • 1.33V
    • 1.34V
    • 1.35V
    • 1.37V
    • 1.4V
    • 1.42V
    • 1.45V
    • 1.46V
    • 1.47V
    • 1.5V
    • 1.52V
    • 1.54V
  • Peak Repetitive Off?State Voltage (Vdrm)
    • 15V
    • 25V
    • 30V
    • 50V
    • 60V
    • 100V
    • 125V
    • 150V
    • 200V
    • 220V
    • 250V
    • 300V
    • 400V
    • 500V
    • 600V
    • 650V
    • 700V
    • 800V
    • 900V
    • 1kV
  • Peak non-repetitive surge current (Itsm@f)
    • 8A
    • 8A@50Hz
    • 8A@60Hz
    • 10A
    • 10A@10ms
    • 10A@60Hz
    • 12A
    • 12A@20ms
    • 15A@60Hz
    • 16A@50Hz
    • 20A@60Hz
    • 25A
    • 25A@50Hz
    • 25A@60Hz
    • 27A
    • 30A
    • 30A@60Hz
    • 32A@60Hz
    • 35A
    • 40A
  • RMS On-State Current(It (rms))
    • 200mA
    • 250mA
    • 450mA
    • 470mA
    • 500mA
    • 600mA
    • 800mA
    • 1A
    • 1.25A
    • 1.26A
    • 1.5A
    • 1.6A
    • 2A
    • 2.5A
    • 3A
    • 4A
    • 4.7A
    • 4.8A
    • 5A
    • 6A
  • SCR Type
    • 1 bidirectional thyristor
    • 1 SCR and 6 diodes
    • 1 unidirectional thyristor
    • 1 Unidirectional Thyristor and 1 Diode
    • 1个单向可控硅
    • 1个单向可控硅和1个二极管
    • 1个单向可控硅和6个二极管
    • 1个双向可控硅
    • 2 Unidirectional Thyristors
    • 2 Unidirectional Thyristors and 2 Diodes
    • 2 Unidirectional Thyristors and 4 Diodes
    • 2个单向可控硅
    • 2个单向可控硅和2个二极管
    • 2个单向可控硅和4个二极管
    • 3 unidirectional thyristors and 3 diodes
    • 3个单向可控硅
    • 3个单向可控硅和3个二极管
    • 4 Unidirectional Thyristors
    • 4个单向可控硅
    • 6 Unidirectional Thyristors
Results remaining: 5542
Quantity
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