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  • Bipolar Transistors - BJT

    (9)
  • Manufacturer
    • Diodes Incorporated
    • FH (Guangdong Fenghua Advanced Tech)
    • Guangdong Hottech
    • RENESAS
    • SPTECH
  • PackageType
    • PowerDI-8(5x6)
    • SOIC-16
    • SOT-23
    • SOT-89-3
  • Collector Current (Ic)
    • 65mA
    • 150mA
    • 800mA
    • 3A
    • 15A
  • Collector Cut-Off Current (Icbo)
    • 100nA
    • 10uA
  • Collector-Emitter Breakdown Voltage (Vceo)
    • 12V;15V
    • 25V
    • 30V
    • 50V
    • 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
    • 100mV@100mA,10mA
    • 350mV@1A,50mA
    • 360mV@3A,300mA
    • 400mV@500mA,20mA
    • 500mV@12A,600mA
    • 600mV@800mA,80mA
  • DC Current Gain (hFE@Ic,Vce)
    • 120@2mA,6V
    • 120@500mA,2V
    • 150@500mA,2V
    • 160@100mA,1V
    • 40@10mA,2V;20@10mA,2V
  • Operating Temperature
    • -55℃~+175℃@(Tj)
  • Power Dissipation (Pd)
    • 150mW
    • 200mW
    • 300mW
    • 2W
    • 5W
    • 30W
  • Transistor Type
    • NPN
    • NPN+PNP
    • PNP
  • Transition Frequency (fT)
    • 80MHz
    • 120MHz
    • 210MHz
    • 8GHz;5.5GHz
Results remaining: 9
Quantity
-
New look survey
9 items in total
  • 1