JLCPCB SMT Parts Library & Component Sourcing
Gallium Nitride (GaN) Devices
(42)- Manufacturer
- Ampleon
- EPC
- GaN Systems
- MA/COM
- NXP Semicon
- PN Junction Semiconductor
- Rochester Electronics, LLC
- Transphorm
- WAVEPIA
- Wuxi Maxinmicro
- miracle
- PackageType
- TO-247-3
- -
- SOT-1227B
- PQFN-3(8x8)
- SOT-467C
- SOIC-8
- SOT-1227A
- TO-220AB
- BGA-9(1.35x1.35)
- DFN-6L(2x2)
- DFN8080-8
- DFN8x8-3L
- NI-780S-4S2S
- PDFN-6(7x6.5)
- SMD
- SOT-1228A
- SOT-502A
- WLCSP-12-B(1.6x1.6)
- Continuous Drain Current
- 17A
- 25A
- 34A
- 46.5A
- 47.2A
- 50A
- 93A
- Continuous Drain Current (Id)
- 13A
- 34A
- 35A
- 36A
- Drain Source Breakdown Voltage
- 600V
- 650V
- 900V
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 1500mΩ
- 60mΩ@22A,10V
- 60mΩ@25A,10V
- 62mΩ@22A,8V
- Drain Source On-State Resistance
- 18mΩ
- 41mΩ
- 63mΩ
- 85mΩ
- Drain Source On-State Resistance(8V)
- 180mΩ
- 41mΩ
- Drain Source Voltage (Vdss)
- 650V
- Driven Configuration
- Half Bridge
- Fall Time
- 4ns
- Feature
- -
- Gate Threshold Voltage (Vgs(th)@Id)
- 2.6V@700uA
- 4.8V@700uA
- Input Capacitance (Ciss@Vds)
- 1000pF@400V
- 2200pF@400V
- Load Type
- FET
- Number of Drivers
- 2
- Operating Temperature
- -40℃~+125℃@(Tj)
- -55℃~+150℃
- -55℃~+150℃@(Tj)
- -55℃~+175℃
- -55℃~+175℃@(Tj)
- Peak Output Current(sink)
- 12.5A
- Peak Output Current(source)
- 7.1A
- Power Dissipation
- 119W
- 156W
- 178W
- 187W
- 266W
- 96W
- Power Dissipation (Pd)
- 10W
- 119W
- 125W
- 150W
- Rise Time
- 8ns
- Supply Voltage
- 4.5V~5.5V
- Total Gate Charge (Qg@Vgs)
- 24nC@10V
- 42nC@8V
- Transistor Type
- 1PCSNChannel
- Type
- N Channel
Quantity
-
42 items in total
- 1
- 2