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Gallium Nitride (GaN) Devices

(65)
  • Manufacturer
    • Ampleon
    • BeRex Corp
    • EPC
    • GaN Systems
    • GOSEMICON
    • HXY MOSFET
    • MACOM
    • miracle
    • NITRIDE
    • NXP Semicon
    • PN Junction Semiconductor
    • Tagore Technology
    • Tokmas
    • Transphorm
  • PackageType
    • BGA-4
    • BGA-6
    • BGA-6(1.3x0.85)
    • BGA-9(1.35x1.35)
    • CSP-6
    • DFN-10(6x8)
    • DFN-6L(2x2)
    • DFN-8(5x6)
    • DFN-8(8x8)
    • DFN-8L(5x6)
    • DFN8080-8
    • DFN8x8-3L
    • Die-11(1.6x4.1)
    • PDFN-9L(8x8)
    • PQFN-3(5x6)
    • PQFN-3(8x8)
    • SMD
    • SOIC-8
    • SOT-1227A
    • SOT-1227B
  • Continuous Drain Current
    • 3.6A
    • 10A
    • 17A
    • 25A
    • 34A
    • 35A
    • 36A
    • 46.5A
    • 47.2A
    • 50A
    • 93A
  • Continuous Drain Current (Id)
    • 10A
    • 13A
    • 17A
  • Drain Source Breakdown Voltage
    • 600V
    • 650V
    • 900V
  • Drain Source On Resistance (RDS(on)@Vgs,Id)
    • 100mΩ
    • 160mΩ
    • 1500mΩ
  • Drain Source On-State Resistance
    • 18mΩ
    • 41mΩ
    • 60mΩ
    • 63mΩ
    • 85mΩ
    • 100mΩ
    • 160mΩ
  • Drain Source On-State Resistance(8V)
    • 41mΩ
    • 62mΩ
    • 180mΩ
    • 560mΩ
  • Drain Source Voltage (Vdss)
    • 650V
  • Gate Threshold Voltage​
    • 1.6V
    • 1.7V
  • Input Capacitance
    • 83pF
    • 125pF
  • Operating Temperature
    • -50℃~+150℃
    • -55℃~+150℃
    • -55℃~+175℃
  • Output Capacitance
    • 27pF
  • Power Dissipation
    • 13.2W
    • 75W
    • 96W
    • 113W
    • 119W
    • 125W
    • 150W
    • 156W
    • 178W
    • 187W
    • 266W
  • Reverse Transfer Capacitance
    • 0.4pF
    • 0.5pF
  • Total Gate Charge
    • 2.3nC
    • 3.3nC
  • Transistor Type
    • 1 N-Channel
    • 1PCSNChannel
  • Type
    • 1PCSNChannel
Results remaining: 65
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65 items in total
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