JLCPCB SMT Parts Library & Component Sourcing
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Gallium Nitride (GaN) Devices
(65)- Manufacturer
- Ampleon
- BeRex Corp
- EPC
- GaN Systems
- GOSEMICON
- HXY MOSFET
- MACOM
- miracle
- NITRIDE
- NXP Semicon
- PN Junction Semiconductor
- Tagore Technology
- Tokmas
- Transphorm
- PackageType
- BGA-4
- BGA-6
- BGA-6(1.3x0.85)
- BGA-9(1.35x1.35)
- CSP-6
- DFN-10(6x8)
- DFN-6L(2x2)
- DFN-8(5x6)
- DFN-8(8x8)
- DFN-8L(5x6)
- DFN8080-8
- DFN8x8-3L
- Die-11(1.6x4.1)
- PDFN-9L(8x8)
- PQFN-3(5x6)
- PQFN-3(8x8)
- SMD
- SOIC-8
- SOT-1227A
- SOT-1227B
- Continuous Drain Current
- 3.6A
- 10A
- 17A
- 25A
- 34A
- 35A
- 36A
- 46.5A
- 47.2A
- 50A
- 93A
- Continuous Drain Current (Id)
- 10A
- 13A
- 17A
- Drain Source Breakdown Voltage
- 600V
- 650V
- 900V
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 100mΩ
- 160mΩ
- 1500mΩ
- Drain Source On-State Resistance
- 18mΩ
- 41mΩ
- 60mΩ
- 63mΩ
- 85mΩ
- 100mΩ
- 160mΩ
- Drain Source On-State Resistance(8V)
- 41mΩ
- 62mΩ
- 180mΩ
- 560mΩ
- Drain Source Voltage (Vdss)
- 650V
- Gate Threshold Voltage
- 1.6V
- 1.7V
- Input Capacitance
- 83pF
- 125pF
- Operating Temperature
- -50℃~+150℃
- -55℃~+150℃
- -55℃~+175℃
- Output Capacitance
- 27pF
- Power Dissipation
- 13.2W
- 75W
- 96W
- 113W
- 119W
- 125W
- 150W
- 156W
- 178W
- 187W
- 266W
- Reverse Transfer Capacitance
- 0.4pF
- 0.5pF
- Total Gate Charge
- 2.3nC
- 3.3nC
- Transistor Type
- 1 N-Channel
- 1PCSNChannel
- Type
- 1PCSNChannel
Quantity
-
New look survey
65 items in total
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- 2
- 3