
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | RealChip | |
| Package | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Ciss-Input Capacitance | 330pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Gate Charge(Qg) | 4.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| Current - Continuous Drain(Id) | 3.5A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 9.2pF | |
| Pd - Power Dissipation | 27W | |
| RDS(on) | 900mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
RC65D900C technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | RealChip | |
| Package | DFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Ciss-Input Capacitance | 330pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Gate Charge(Qg) | 4.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.8pF | |
| Current - Continuous Drain(Id) | 3.5A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 9.2pF | |
| Pd - Power Dissipation | 27W | |
| RDS(on) | 900mΩ |
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The RC65D900C schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.