- Manufacturer
- MFR.Part #
- INN150LA070A
- JLCPCB Part #
- C19725717
- Package
- LGA-3
- Description
- -40℃~+150℃ 1.1V 150V 2.5pF 280pF 28A 5.6mΩ 7.6nC 865pF E-mode LGA-3(2.2x3.2) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Standard Only
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | LGA-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Ciss-Input Capacitance | 865pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.6nC | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 280pF | |
| RDS(on) | 5.6mΩ |
* Images are for reference only
INN150LA070A
Extended- Manufacturer
- MFR.Part #
- INN150LA070A
- JLCPCB Part #
- C19725717
- Package
- LGA-3
- Description
- -40℃~+150℃ 1.1V 150V 2.5pF 280pF 28A 5.6mΩ 7.6nC 865pF E-mode LGA-3(2.2x3.2) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Standard Only
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- INN150LA070A
- JLCPCB Part #
- C19725717
- Package
- LGA-3
- Description
- -40℃~+150℃ 1.1V 150V 2.5pF 280pF 28A 5.6mΩ 7.6nC 865pF E-mode LGA-3(2.2x3.2) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Standard Only
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
INN150LA070A Specifications
INN150LA070A technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | LGA-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Ciss-Input Capacitance | 865pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.6nC | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 280pF | |
| RDS(on) | 5.6mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the INN150LA070A. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
INN150LA070A Schematic Symbol & PCB Footprint
The INN150LA070A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.