


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | FCLGA3 | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 865pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.6nC | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| Drain to Source Voltage | 150V | |
| Pd - Power Dissipation | 28W | |
| Output Capacitance(Coss) | 280pF | |
| RDS(on) | 5.6mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
GAN7R0-150LBEZ technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | FCLGA3 | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 865pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.6nC | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 2.5pF | |
| Drain to Source Voltage | 150V | |
| Pd - Power Dissipation | 28W | |
| Output Capacitance(Coss) | 280pF | |
| RDS(on) | 5.6mΩ |
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GAN7R0-150LBEZ datasheets or manufacturer documentation.
Datasheet: GAN7R0-150LBEZ Datasheet (PDF)
The GAN7R0-150LBEZ schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.