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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. RX65T125HS2A
RX65T125HS2A - 1
RX65T125HS2A - 2
RX65T125HS2A - 3
Extended1/3
* Images are for reference only
RX65T125HS2A
Attributes
Value
Manufacturer
Runxin
MFR.Part #
RX65T125HS2A
JLCPCB Part #
C5370029
Package
DFN8x8
Description
-55℃~+150℃ 1 N-channel 120mΩ 18A 21nC 3pF 40pF 4V 606pF 650V 67.5W E-mode N-Channel DFN8x8 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerRunxin
PackageDFN8x8
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance606pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
TechnologyE-mode
Gate Charge(Qg)21nC
Reverse Transfer Capacitance (Crss)3pF
Current - Continuous Drain(Id)18A
Drain to Source Voltage650V
Pd - Power Dissipation67.5W
Output Capacitance(Coss)40pF
RDS(on)120mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. RX65T125HS2A
RX65T125HS2A

* Images are for reference only

RX65T125HS2A

Extended
Manufacturer

Runxin

MFR.Part #
RX65T125HS2A
JLCPCB Part #
C5370029
Package
DFN8x8
Description
-55℃~+150℃ 1 N-channel 120mΩ 18A 21nC 3pF 40pF 4V 606pF 650V 67.5W E-mode N-Channel DFN8x8 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

RX65T125HS2A

* Images are for reference only

RX65T125HS2A
Extended
Manufacturer

Runxin

MFR.Part #
RX65T125HS2A
JLCPCB Part #
C5370029
Package
DFN8x8
Description
-55℃~+150℃ 1 N-channel 120mΩ 18A 21nC 3pF 40pF 4V 606pF 650V 67.5W E-mode N-Channel DFN8x8 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

RX65T125HS2A Specifications

RX65T125HS2A technical specifications, attributes, and parameters.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerRunxin
PackageDFN8x8
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance606pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
TechnologyE-mode
Gate Charge(Qg)21nC
Reverse Transfer Capacitance (Crss)3pF
Current - Continuous Drain(Id)18A
Drain to Source Voltage650V
Pd - Power Dissipation67.5W
Output Capacitance(Coss)40pF
RDS(on)120mΩ
Results remaining: 0

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RX65T125HS2A Documents

RX65T125HS2A datasheets or manufacturer documentation.

Datasheet: RX65T125HS2A Datasheet (PDF)

RX65T125HS2A Schematic Symbol & PCB Footprint

The RX65T125HS2A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.