- Manufacturer
- MFR.Part #
- IGLT65R025D2
- JLCPCB Part #
- C51892609
- Package
- HDSOP-16
- Description
- -55℃~+150℃ 1.2V 1.8pF 11nC 130pF 219W 25mΩ 650V 67A 780pF E-mode HDSOP-16 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | HDSOP-16 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 780pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 11nC | |
| Current - Continuous Drain(Id) | 67A | |
| Reverse Transfer Capacitance (Crss) | 1.8pF | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 219W | |
| Output Capacitance(Coss) | 130pF | |
| RDS(on) | 25mΩ |
* Images are for reference only
IGLT65R025D2
Extended- Manufacturer
- MFR.Part #
- IGLT65R025D2
- JLCPCB Part #
- C51892609
- Package
- HDSOP-16
- Description
- -55℃~+150℃ 1.2V 1.8pF 11nC 130pF 219W 25mΩ 650V 67A 780pF E-mode HDSOP-16 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- IGLT65R025D2
- JLCPCB Part #
- C51892609
- Package
- HDSOP-16
- Description
- -55℃~+150℃ 1.2V 1.8pF 11nC 130pF 219W 25mΩ 650V 67A 780pF E-mode HDSOP-16 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IGLT65R025D2 Specifications
IGLT65R025D2 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | HDSOP-16 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 780pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 11nC | |
| Current - Continuous Drain(Id) | 67A | |
| Reverse Transfer Capacitance (Crss) | 1.8pF | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 219W | |
| Output Capacitance(Coss) | 130pF | |
| RDS(on) | 25mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IGLT65R025D2. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IGLT65R025D2 Schematic Symbol & PCB Footprint
The IGLT65R025D2 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.