- Manufacturer
- MFR.Part #
- ISG6124TD
- JLCPCB Part #
- C49274927
- Package
- TO-247-4L
- Description
- -55℃~+150℃ 1 N-channel 208W 269pF 35A 59mΩ 7.4nC 800V 98pF E-mode N-Channel TO-247-4L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 269pF | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.4nC | |
| Current - Continuous Drain(Id) | 35A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 98pF | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 59mΩ |
* Images are for reference only
ISG6124TD
Extended- Manufacturer
- MFR.Part #
- ISG6124TD
- JLCPCB Part #
- C49274927
- Package
- TO-247-4L
- Description
- -55℃~+150℃ 1 N-channel 208W 269pF 35A 59mΩ 7.4nC 800V 98pF E-mode N-Channel TO-247-4L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- ISG6124TD
- JLCPCB Part #
- C49274927
- Package
- TO-247-4L
- Description
- -55℃~+150℃ 1 N-channel 208W 269pF 35A 59mΩ 7.4nC 800V 98pF E-mode N-Channel TO-247-4L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
ISG6124TD Specifications
ISG6124TD technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Innoscience | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 269pF | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 7.4nC | |
| Current - Continuous Drain(Id) | 35A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 98pF | |
| Pd - Power Dissipation | 208W | |
| RDS(on) | 59mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the ISG6124TD. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
ISG6124TD Schematic Symbol & PCB Footprint
The ISG6124TD schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.