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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. IGB110S10S1XTMA1
IGB110S10S1XTMA1 - 1
IGB110S10S1XTMA1 - 2
IGB110S10S1XTMA1 - 3
Extended1/3
* Images are for reference only
IGB110S10S1XTMA1
Attributes
Value
Manufacturer
Infineon Technologies
MFR.Part #
IGB110S10S1XTMA1
JLCPCB Part #
C43313312
Package
PG-TSON-4-2
Description
-40℃~+150℃ 1 N-channel 100V 140pF 15W 2.3pF 23A 2V 3.4nC 300pF 9.4mΩ E-mode N-Channel PG-TSON-4-2 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerInfineon Technologies
PackagePG-TSON-4-2
Operating Temperature-40℃~+150℃
TypeN-Channel
Ciss-Input Capacitance300pF
Gate Threshold Voltage (Vgs(th))2V
Number1 N-channel
TechnologyE-mode
Gate Charge(Qg)3.4nC
Reverse Transfer Capacitance (Crss)2.3pF
Current - Continuous Drain(Id)23A
Drain to Source Voltage100V
Output Capacitance(Coss)140pF
Pd - Power Dissipation15W
RDS(on)9.4mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. IGB110S10S1XTMA1
IGB110S10S1XTMA1

* Images are for reference only

IGB110S10S1XTMA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IGB110S10S1XTMA1
JLCPCB Part #
C43313312
Package
PG-TSON-4-2
Description
-40℃~+150℃ 1 N-channel 100V 140pF 15W 2.3pF 23A 2V 3.4nC 300pF 9.4mΩ E-mode N-Channel PG-TSON-4-2 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IGB110S10S1XTMA1

* Images are for reference only

IGB110S10S1XTMA1
Extended
Manufacturer

Infineon Technologies

MFR.Part #
IGB110S10S1XTMA1
JLCPCB Part #
C43313312
Package
PG-TSON-4-2
Description
-40℃~+150℃ 1 N-channel 100V 140pF 15W 2.3pF 23A 2V 3.4nC 300pF 9.4mΩ E-mode N-Channel PG-TSON-4-2 GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IGB110S10S1XTMA1 Specifications

IGB110S10S1XTMA1 technical specifications, attributes, and parameters.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerInfineon Technologies
PackagePG-TSON-4-2
Operating Temperature-40℃~+150℃
TypeN-Channel
Ciss-Input Capacitance300pF
Gate Threshold Voltage (Vgs(th))2V
Number1 N-channel
TechnologyE-mode
Gate Charge(Qg)3.4nC
Reverse Transfer Capacitance (Crss)2.3pF
Current - Continuous Drain(Id)23A
Drain to Source Voltage100V
Output Capacitance(Coss)140pF
Pd - Power Dissipation15W
RDS(on)9.4mΩ
Results remaining: 0

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IGB110S10S1XTMA1 Schematic Symbol & PCB Footprint

The IGB110S10S1XTMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.