- Manufacturer
- MFR.Part #
- IGT65R045D2ATMA1
- JLCPCB Part #
- C42669719
- Package
- PG-HSOF-8
- Description
- -55℃~+150℃ 0.98pF 1.2V 131W 38A 430pF 45mΩ 650V 6nC 72pF E-mode PG-HSOF-8 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | PG-HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 430pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 6nC | |
| Reverse Transfer Capacitance (Crss) | 0.98pF | |
| Current - Continuous Drain(Id) | 38A | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 131W | |
| Output Capacitance(Coss) | 72pF | |
| RDS(on) | 45mΩ |
* Images are for reference only
IGT65R045D2ATMA1
Extended- Manufacturer
- MFR.Part #
- IGT65R045D2ATMA1
- JLCPCB Part #
- C42669719
- Package
- PG-HSOF-8
- Description
- -55℃~+150℃ 0.98pF 1.2V 131W 38A 430pF 45mΩ 650V 6nC 72pF E-mode PG-HSOF-8 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- IGT65R045D2ATMA1
- JLCPCB Part #
- C42669719
- Package
- PG-HSOF-8
- Description
- -55℃~+150℃ 0.98pF 1.2V 131W 38A 430pF 45mΩ 650V 6nC 72pF E-mode PG-HSOF-8 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IGT65R045D2ATMA1 Specifications
IGT65R045D2ATMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | PG-HSOF-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 430pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 6nC | |
| Reverse Transfer Capacitance (Crss) | 0.98pF | |
| Current - Continuous Drain(Id) | 38A | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 131W | |
| Output Capacitance(Coss) | 72pF | |
| RDS(on) | 45mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IGT65R045D2ATMA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IGT65R045D2ATMA1 Schematic Symbol & PCB Footprint
The IGT65R045D2ATMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.