- Manufacturer
- MFR.Part #
- RC65D180E
- JLCPCB Part #
- C42427957
- Package
- TO-252-2L
- Description
- -55℃~+150℃ 14A 180mΩ 1pF 25pF 3.9V 331pF 650V 7.4nC 89W N-Channel TO-252-2L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | RealChip | |
| Package | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 331pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Gate Charge(Qg) | 7.4nC | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 89W | |
| RDS(on) | 180mΩ |
* Images are for reference only
RC65D180E
Extended- Manufacturer
- MFR.Part #
- RC65D180E
- JLCPCB Part #
- C42427957
- Package
- TO-252-2L
- Description
- -55℃~+150℃ 14A 180mΩ 1pF 25pF 3.9V 331pF 650V 7.4nC 89W N-Channel TO-252-2L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- RC65D180E
- JLCPCB Part #
- C42427957
- Package
- TO-252-2L
- Description
- -55℃~+150℃ 14A 180mΩ 1pF 25pF 3.9V 331pF 650V 7.4nC 89W N-Channel TO-252-2L GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
RC65D180E Specifications
RC65D180E technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | RealChip | |
| Package | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 331pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Gate Charge(Qg) | 7.4nC | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 89W | |
| RDS(on) | 180mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the RC65D180E. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
RC65D180E Schematic Symbol & PCB Footprint
The RC65D180E schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.