- Manufacturer
- MFR.Part #
- CID10N65E3
- JLCPCB Part #
- C41369699
- Package
- TO-252
- Description
- 0.4pF 1.6V 160mΩ 2.3nC 27pF 650V 83pF E-mode TO-252 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Tokmas | |
| Package | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 83pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 2.3nC | |
| Reverse Transfer Capacitance (Crss) | 0.4pF | |
| Current - Continuous Drain(Id) | 10A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 160mΩ |
* Images are for reference only
CID10N65E3
Extended- Manufacturer
- MFR.Part #
- CID10N65E3
- JLCPCB Part #
- C41369699
- Package
- TO-252
- Description
- 0.4pF 1.6V 160mΩ 2.3nC 27pF 650V 83pF E-mode TO-252 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- CID10N65E3
- JLCPCB Part #
- C41369699
- Package
- TO-252
- Description
- 0.4pF 1.6V 160mΩ 2.3nC 27pF 650V 83pF E-mode TO-252 GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
CID10N65E3 Specifications
CID10N65E3 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Tokmas | |
| Package | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 83pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 2.3nC | |
| Reverse Transfer Capacitance (Crss) | 0.4pF | |
| Current - Continuous Drain(Id) | 10A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 27pF | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 160mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the CID10N65E3. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
CID10N65E3 Schematic Symbol & PCB Footprint
The CID10N65E3 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.