- Manufacturer
- MFR.Part #
- GPI65030DFN
- JLCPCB Part #
- C2905407
- Package
- DFN-8-EP(8x8)
- Description
- 1 N-channel 1.2V 241pF 30A 5.8nC 55mΩ 61pF 650V 8.4pF E-mode N-Channel DFN-8-EP(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | GaNPower | |
| Package | DFN-8-EP(8x8) | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 241pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 5.8nC | |
| Reverse Transfer Capacitance (Crss) | 8.4pF | |
| Current - Continuous Drain(Id) | 30A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 61pF | |
| RDS(on) | 55mΩ |
* Images are for reference only
GPI65030DFN
Extended- Manufacturer
- MFR.Part #
- GPI65030DFN
- JLCPCB Part #
- C2905407
- Package
- DFN-8-EP(8x8)
- Description
- 1 N-channel 1.2V 241pF 30A 5.8nC 55mΩ 61pF 650V 8.4pF E-mode N-Channel DFN-8-EP(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- GPI65030DFN
- JLCPCB Part #
- C2905407
- Package
- DFN-8-EP(8x8)
- Description
- 1 N-channel 1.2V 241pF 30A 5.8nC 55mΩ 61pF 650V 8.4pF E-mode N-Channel DFN-8-EP(8x8) GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
GPI65030DFN Specifications
GPI65030DFN technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | GaNPower | |
| Package | DFN-8-EP(8x8) | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 241pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 5.8nC | |
| Reverse Transfer Capacitance (Crss) | 8.4pF | |
| Current - Continuous Drain(Id) | 30A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 61pF | |
| RDS(on) | 55mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the GPI65030DFN. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
GPI65030DFN Documents
GPI65030DFN datasheets or manufacturer documentation.
Datasheet: GPI65030DFN Datasheet (PDF)
GPI65030DFN Schematic Symbol & PCB Footprint
The GPI65030DFN schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.