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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. GBG65200NMAR
GBG65200NMAR - 1
GBG65200NMAR - 2
GBG65200NMAR - 3
Extended1/3
* Images are for reference only
GBG65200NMAR
Attributes
Value
Manufacturer
GOSEMICON
MFR.Part #
GBG65200NMAR
JLCPCB Part #
C28324645
Package
PDFN-9L(8x8)
Description
-55℃~+150℃ 0.8pF 1.4V 1.9nC 11A 140mΩ 30pF 650V 68pF 83W E-mode PDFN-9L(8x8) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerGOSEMICON
PackagePDFN-9L(8x8)
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance68pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Gate Charge(Qg)1.9nC
Current - Continuous Drain(Id)11A
Reverse Transfer Capacitance (Crss)0.8pF
Drain to Source Voltage650V
Output Capacitance(Coss)30pF
Pd - Power Dissipation83W
RDS(on)140mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. GBG65200NMAR
GBG65200NMAR

* Images are for reference only

GBG65200NMAR

Extended
Manufacturer

GOSEMICON

MFR.Part #
GBG65200NMAR
JLCPCB Part #
C28324645
Package
PDFN-9L(8x8)
Description
-55℃~+150℃ 0.8pF 1.4V 1.9nC 11A 140mΩ 30pF 650V 68pF 83W E-mode PDFN-9L(8x8) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

GBG65200NMAR

* Images are for reference only

GBG65200NMAR
Extended
Manufacturer

GOSEMICON

MFR.Part #
GBG65200NMAR
JLCPCB Part #
C28324645
Package
PDFN-9L(8x8)
Description
-55℃~+150℃ 0.8pF 1.4V 1.9nC 11A 140mΩ 30pF 650V 68pF 83W E-mode PDFN-9L(8x8) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

GBG65200NMAR Specifications

GBG65200NMAR technical specifications, attributes, and parameters.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerGOSEMICON
PackagePDFN-9L(8x8)
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance68pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))1.4V
TechnologyE-mode
Gate Charge(Qg)1.9nC
Current - Continuous Drain(Id)11A
Reverse Transfer Capacitance (Crss)0.8pF
Drain to Source Voltage650V
Output Capacitance(Coss)30pF
Pd - Power Dissipation83W
RDS(on)140mΩ
Results remaining: 0

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GBG65200NMAR Documents

GBG65200NMAR datasheets or manufacturer documentation.

Datasheet: GBG65200NMAR Datasheet (PDF)

GBG65200NMAR Schematic Symbol & PCB Footprint

The GBG65200NMAR schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.