


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | WLCSP-8(3.5x2.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1000pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 9.2nC | |
| Reverse Transfer Capacitance (Crss) | 8.2pF | |
| Current - Continuous Drain(Id) | 60A | |
| Drain to Source Voltage | 100V | |
| Pd - Power Dissipation | 394W | |
| Output Capacitance(Coss) | 460pF | |
| RDS(on) | 2.4mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
GAN3R2-100CBEAZ technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | WLCSP-8(3.5x2.1) | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1000pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Number | 1 N-channel | |
| Technology | E-mode | |
| Gate Charge(Qg) | 9.2nC | |
| Reverse Transfer Capacitance (Crss) | 8.2pF | |
| Current - Continuous Drain(Id) | 60A | |
| Drain to Source Voltage | 100V | |
| Pd - Power Dissipation | 394W | |
| Output Capacitance(Coss) | 460pF | |
| RDS(on) | 2.4mΩ |
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GAN3R2-100CBEAZ datasheets or manufacturer documentation.
Datasheet: GAN3R2-100CBEAZ Datasheet (PDF)
The GAN3R2-100CBEAZ schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.