JLCPCB SMT Parts Library & Component Sourcing
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Silicon Carbide (SiC) Devices
(1818)- Manufacturer
- (DIOTEC)
- AnBon
- ANHI
- BOURNS
- Bruckewell
- CENGOL
- Central Semicon
- CETC
- Comchip
- Diodes Incorporated
- FUXINSEMI
- GeneSiC Semiconductor
- HXY MOSFET
- Infineon Technologies
- InventChip
- KIA Semicon Tech
- KNSCHA
- LGE
- Liown
- Littelfuse
- PackageType
- AG-62mm
- AG-EASY1B-2
- D2PAK
- D2PAK-2(TO-263)
- D2PAK-3
- D2PAK-7
- D2PAK-HV
- D2PAK7
- D2PAK7(TO-263-7L-HV)
- D3PAK
- DFN-4(8x8)
- DFN-4-EP(8x8)
- DFN-5(8x8)
- DFN5060
- DFN8080-5
- DFN8080-8
- DO-214AA
- DO-247
- DO-247-2
- DO-247LL
- Average Rectified Current (Io)
- 300mA
- 1A
- 2A
- 2.15A
- 2.5A
- 3A
- 3.3A
- 4A
- 5A
- 5.7A
- 6A
- 7A
- 7.6A
- 7.7A
- 8A
- 8.6A
- 8.8A
- 9A
- 9.1A
- 9.2A
- Channel Type
- 1 N-Channel
- 1PCSNChannel
- 2 N-Channel
- 4PCSNChannel
- Configuration
- Half Bridge
- 三相桥
- Continuous Drain Current
- 3A
- 4A
- 4.7A
- 5A
- 5.2A
- 5.3A
- 6A
- 6.2A
- 6.4A
- 6.7A
- 7A
- 7.4A
- 7.6A
- 9A
- 10A
- 11A
- 11.5A
- 13A
- 14A
- 17A
- Continuous Drain Current (Id)
- 17A
- 63A
- 66A
- 100A
- Diode Configuration
- 1 pair of common cathodes
- 2 Independent
- 2 independent
- Dual
- Dual Common Cathode
- Independent Type
- Single
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 21mΩ
- 32mΩ
- 40mΩ
- 160mΩ
- Drain Source Threshold Voltage
- 1.8V
- 2V
- 2.3V
- 2.4V
- 2.5V
- 2.6V
- 2.8V
- 2.9V
- 3V
- 3.2V
- 3.6V
- 4.5V
- Drain Source Voltage
- 650V
- 700V
- 750V
- 900V
- 1000V
- 1200V
- 1700V
- 3300V
- Drain Source Voltage (Vdss)
- 1.2kV
- Drain-Source On-State Resistance(15V)
- 16mΩ
- 25mΩ
- 42mΩ
- 60mΩ
- 75mΩ
- 809mΩ
- Drain-Source On-State Resistance(18V)
- 19mΩ
- 28mΩ
- 30mΩ
- 35mΩ
- 40mΩ
- 48mΩ
- 57mΩ
- Drain-Source On-State Resistance(20V)
- 45ｍΩ
- 25mΩ
- 27mΩ
- 33mΩ
- 40mΩ
- 80mΩ
- 160mΩ
- 650mΩ
- 700mΩ
- 0.8Ω
- 1000mΩ
- Encapsulated Type
- Single tube
- 单管
- Forward Voltage (Vf@If)
- 1.25V@10A
- 1.25V@12A
- 1.25V@16A
- 1.25V@20A
- 1.25V@4A
- 1.25V@6A
- 1.25V@8A
- 1.27V
- 1.27V@10A
- 1.27V@4A
- 1.3V@10A
- 1.3V@16A
- 1.3V@20A
- 1.3V@30A
- 1.3V@4A
- 1.3V@6A
- 1.3V@8A
- 1.34V@6A
- 1.35V@10A
- 1.35V@12A
- Input Capacitance
- 179pF
- 186pF
- 194pF
- 215pF
- 275pF
- 1020pF
- 1118pF
- 1130pF
- 1196pF
- 1230pF
- 1475pF
- 1680pF
- 2070pF
- 2120pF
- 2440pF
- 3290pF
- 3480pF
- 3550pF
- 4700pF
- 6085pF
- Operating Temperature
- -40℃~+150℃
- -40℃~+175℃
- -55℃~+150℃
- -55℃~+175℃
- -55℃~175℃
- Output Capacitance
- 69pF
- 80pF
- 124pF
- 171pF
- 230pF
- 231pF
- Power Dissipation
- 32W
- 45W
- 50W
- 54W
- 60W
- 62W
- 62.5W
- 65W
- 66.9W
- 68W
- 69W
- 74W
- 75W
- 78W
- 83W
- 85W
- 86W
- 88W
- 91W
- 94W
- Power Dissipation (Pd)
- 97W
- 283W
- 326W
- 469W
- Rectified Current (Io)
- 2A
- 3A
- 4A
- 5A
- 6A
- 8A
- 9A
- 10A
- 12A
- 13.5A
- 15A
- 16A
- 16.5A
- 19A
- 20A
- 24A
- 24.5A
- 25A
- 26A
- 28A
- Reverse Leakage Current (Ir)
- 12nA@650V
- 25nA@650V
- 30nA@650V
- 80nA@1.7kV
- 100nA@650V
- 150nA@1.7kV
- 150nA@650V
- 200nA@650V
- 230nA@600V
- 300nA@600V
- 300nA@650V
- 400nA@420V
- 400nA@600V
- 400nA@650V
- 450nA@650V
- 500nA@600V
- 500nA@650V
- 600nA@420V
- 600nA@600V
- 600nA@650V
- Reverse Transfer Capacitance
- 0.7pF
- 1.6pF
- 1.8pF
- 2.2pF
- 5pF
- 6.7pF
- 7.5pF
- 7.8pF
- 9pF
- 10.8pF
- 11pF
- 13pF
- 25pF
- 29pF
- 42.8pF
- Reverse Voltage (Vr)
- 100V
- 300V
- 600V
- 650V
- 700V
- 1.2kV
- 1200V
- 1.23kV
- 1.7kV
- 1700V
- 3.3kV
- Total Gate Charge
- 110.8nC
- 120nC
- 121nC
- 133nC
- 160nC
- 164nC
- 207nC
- 21.8nC
- 22nC
- 23nC
- 33nC
- 46nC
- 57nC
- 5nC
- 63nC
- 71nC
- 76nC
- 79nC
- Total Gate Charge (Qg@Vgs)
- 101nC
- 114nC
- 118nC
- 162nC
- 38nC
- Type
- 1PCSNChannel
Quantity
-
New look survey 
1818 items in total
- 1
- 2
- 3
- 4
- 5
- 6
- 73
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