


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | DFN5060-5 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 96pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 2.8nC | |
| Current - Continuous Drain(Id) | 11.5A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 138mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
GAN190-650FBEZ technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Nexperia | |
| Package | DFN5060-5 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 96pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 2.8nC | |
| Current - Continuous Drain(Id) | 11.5A | |
| Reverse Transfer Capacitance (Crss) | 0.5pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 138mΩ |
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GAN190-650FBEZ datasheets or manufacturer documentation.
Datasheet: GAN190-650FBEZ Datasheet (PDF)
The GAN190-650FBEZ schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.