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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. INN200EQ080A
INN200EQ080A
Extended
* Images are for reference only

INN200EQ080A

Attributes
Value
Manufacturer
Innoscience
MFR.Part #
INN200EQ080A
JLCPCB Part #
C41427572
Package
QFN-10(3x5)
Description
QFN-10(3x5) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerInnoscience
PackageQFN-10(3x5)
Operating Temperature-40℃~+150℃
TypeN-Channel
Ciss-Input Capacitance1250pF
Gate Threshold Voltage (Vgs(th))1.1V
Number1 N-channel
TechnologyE-mode
Gate Charge(Qg)11nC
Current - Continuous Drain(Id)120A
Reverse Transfer Capacitance (Crss)7pF
Drain to Source Voltage200V
Output Capacitance(Coss)550pF
RDS(on)6mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Gallium Nitride (GaN) Devices
  5. GaN Transistors(GaN HEMT)
  6. INN200EQ080A
INN200EQ080A

* Images are for reference only

INN200EQ080A

Extended
Manufacturer

Innoscience

MFR.Part #
INN200EQ080A
JLCPCB Part #
C41427572
Package
QFN-10(3x5)
Description
QFN-10(3x5) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

INN200EQ080A

* Images are for reference only

INN200EQ080A

Extended
Manufacturer

Innoscience

MFR.Part #
INN200EQ080A
JLCPCB Part #
C41427572
Package
QFN-10(3x5)
Description
QFN-10(3x5) GaN Transistors(GaN HEMT) ROHS
EasyEDA Libraries
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

INN200EQ080A Specifications

INN200EQ080A technical specifications, attributes, and parameters.

AttributesValue
CategoryGallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT)
ManufacturerInnoscience
PackageQFN-10(3x5)
Operating Temperature-40℃~+150℃
TypeN-Channel
Ciss-Input Capacitance1250pF
Gate Threshold Voltage (Vgs(th))1.1V
Number1 N-channel
TechnologyE-mode
Gate Charge(Qg)11nC
Current - Continuous Drain(Id)120A
Reverse Transfer Capacitance (Crss)7pF
Drain to Source Voltage200V
Output Capacitance(Coss)550pF
RDS(on)6mΩ
Results remaining: 0

PCB Assembly Tips

From components to fully assembled PCBs. JLCPCB supports PCB assembly for the INN200EQ080A. Sign up to receive and start your assembly today →

  • 1

    Step 1 - Pre-order the parts you need from JLCPCB.

  • 2

    Step 2 - Place a PCBA order to have those parts assembled onto your boards.

  • 3

    Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.

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INN200EQ080A Schematic Symbol & PCB Footprint

The INN200EQ080A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.