GS66504BMRXUSA1
- Manufacturer
- MFR.Part #
- GS66504BMRXUSA1
- JLCPCB Part #
- C48939562
- Package
- SMD
- Description
- -55℃~+150℃ 1 N-channel 1.1pF 1.7V 100mΩ 120pF 15A 3.3nC 31pF 650V E-mode N-Channel SMD GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 120pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 3.3nC | |
| Reverse Transfer Capacitance (Crss) | 1.1pF | |
| Current - Continuous Drain(Id) | 15A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 31pF | |
| RDS(on) | 100mΩ |
* Images are for reference only
GS66504BMRXUSA1
Extended- Manufacturer
- MFR.Part #
- GS66504BMRXUSA1
- JLCPCB Part #
- C48939562
- Package
- SMD
- Description
- -55℃~+150℃ 1 N-channel 1.1pF 1.7V 100mΩ 120pF 15A 3.3nC 31pF 650V E-mode N-Channel SMD GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
GS66504BMRXUSA1
Extended- Manufacturer
- MFR.Part #
- GS66504BMRXUSA1
- JLCPCB Part #
- C48939562
- Package
- SMD
- Description
- -55℃~+150℃ 1 N-channel 1.1pF 1.7V 100mΩ 120pF 15A 3.3nC 31pF 650V E-mode N-Channel SMD GaN Transistors(GaN HEMT) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
GS66504BMRXUSA1 Specifications
GS66504BMRXUSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices/GaN Transistors(GaN HEMT) | |
| Manufacturer | Infineon Technologies | |
| Package | SMD | |
| Operating Temperature | -55℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 120pF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Gate Charge(Qg) | 3.3nC | |
| Reverse Transfer Capacitance (Crss) | 1.1pF | |
| Current - Continuous Drain(Id) | 15A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 31pF | |
| RDS(on) | 100mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the GS66504BMRXUSA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
GS66504BMRXUSA1 Schematic Symbol & PCB Footprint
The GS66504BMRXUSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.