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  • Intelligent Power Modules (IPM)

    (919)
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  • Manufacturer
    • Alpha & Omega Semicon
    • BPS(Bright Power Semicon)
    • CRMICRO
    • Fortior Tech
    • Fuji Electric
    • GeneSiC Semiconductor
    • Hangzhou Silan Microelectronics
    • iCM
    • Infineon Technologies
    • JIAENSEMI
  • PackageType
    • APMCA-A16
    • APMCA-B16
    • ASOP-10
    • BFSOP-20-EP-300mil
    • DI-24-Power
    • DIP
    • DIP,15x34mm
    • DIP,21x26mm
    • DIP-021
    • DIP-023
  • Collector-Emitter Breakdown Voltage (Vces)
    • 600V
  • Current - Collector(Ic)
    • 4A
    • 40A
  • Current - Continuous Drain(Id)
    • 1A
    • 2A
    • 2.2A
    • 2.5A
    • 3A
    • 5A
    • 6A
    • 7A
    • 10A
    • 15A
  • Current - Output High(IOH)
    • 180mA
    • 200mA
    • 290mA
    • 350mA
    • 3A
    • 9A
    • 75A
  • Current - Output Low(IOL)
    • 1mA
    • 5mA
    • 7mA
    • 350mA
    • 380mA
    • 420mA
    • 540mA
    • 600mA
    • 650mA
    • 4A
  • Current - Supply
    • 10mA
  • Drain to Source Voltage
    • 40V
    • 100V
    • 300V
    • 500V
    • 600V
    • 1.2kV
  • Driven Configuration
    • Full-Bridge
    • Half-Bridge
    • Low Side
    • Three Phase
  • Fall Time
    • 1.117us
    • 10ns
    • 11ns
    • 151ns
    • 15ns
    • 20ns
    • 25ns
    • 26ns
    • 35ns
    • 360ns
  • Features
    • Over Current Protection
    • Over Temperature Protection
    • Over Voltage Protection
    • Under Voltage Protection
  • Frequency - Switching
    • 10kHz
    • 15kHz
    • 20kHz
    • 25kHz
    • 200kHz
    • 300kHz~1.5MHz
    • 500kHz
    • 1MHz
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic)
    • 1.58V@15V,1A
    • 1.78V@15V,500mA
  • High-side Bias Voltage(Vbs)
    • 13.5V~16.5V
  • Interface
    • UART
  • Isolation
    • Non-Isolated
  • Load Type
    • IGBT
    • MOSFET
  • Number of Channels
    • 3
    • 4
  • Number of Drivers
    • 6
  • Operating Temperature
    • -10℃~+100℃
    • -20℃~+100℃
    • -30℃~+100℃
    • -40℃~+100℃
    • -40℃~+105℃
    • -40℃~+115℃
    • -40℃~+125℃
    • -40℃~+125℃@(Ta)
    • -40℃~+150℃
    • -40℃~+150℃@(Tj)
  • Operating Temperature -
    • -40℃~+120℃
  • Operating temperature
    • -20℃~+125℃
    • -40℃~+100℃
    • -40℃~+105℃
    • -40℃~+125℃
    • -40℃~+150℃
  • Output Current
    • 1A
    • 1.5A
    • 1.6A
    • 2A
    • 2.1A
    • 2.4A
    • 2.6A
    • 3A
    • 3.6A
    • 4A
  • Pd - Power Dissipation
    • 9W
    • 13W
    • 113W
  • Peak Current
    • 3A
    • 3.9A
    • 5A
    • 6A
    • 7A
    • 8A
    • 9A
    • 10A
    • 11A
    • 12A
  • Propagation Delay tpHL
    • 150ns
  • Propagation Delay tpLH
    • 160ns
  • Quiescent Current(Iq)
    • 600uA
    • 1mA
    • 1.5mA
    • 4.75mA
  • RDS(on)
    • 450mΩ
    • 740mΩ
    • 860mΩ
    • 1Ω
    • 1.26Ω
    • 1.3Ω
    • 1.5Ω
    • 1.8Ω
    • 1.85Ω
    • 2Ω
  • Reverse Recovery Time(trr)
    • 43ns
    • 84.2ns
  • Rise Time
    • 125ns
    • 70ns
    • 90ns
  • Switching Energy(Eoff)
    • 13.6uJ
  • Td(off)
    • 500ns
    • 737ns
  • Td(on)
    • 500ns
    • 508ns
  • Topology
    • Buck
  • Turn-On Energy (Eon)
    • 19.9uJ
  • Type
    • High Side Switch
    • IGBT
    • MOSFET
  • Vce Saturation(VCE(sat))
    • 2.3V@40A,5V
  • Voltage - Forward(Vf)
    • 2.2V@40A
  • Voltage - Isolation
    • 1000Vrms
    • 1500Vrms
    • 1600Vrms
    • 1900Vrms
    • 2000Vrms
    • 2500Vrms
    • 5000Vrms
  • Voltage - Supply
    • 3V~3.6V
    • 3V~16V
    • 3V~14V
    • 3V~5.5V
    • 3.3V~5V
    • 4.25V~17V
    • 4.4V~13.2V
    • 4.5V~5.5V
    • 4.5V~18V
    • 4.75V~5.25V
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