


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | onsemi | |
| Package | D2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 2.943nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Gate Charge(Qg) | 220nC | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| Current - Continuous Drain(Id) | 98A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 258pF | |
| Pd - Power Dissipation | 468W | |
| RDS(on) | 28mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
NVBG020N120SC1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | onsemi | |
| Package | D2PAK-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 2.943nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.3V | |
| Gate Charge(Qg) | 220nC | |
| Reverse Transfer Capacitance (Crss) | 24pF | |
| Current - Continuous Drain(Id) | 98A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 258pF | |
| Pd - Power Dissipation | 468W | |
| RDS(on) | 28mΩ |
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NVBG020N120SC1 datasheets or manufacturer documentation.
Datasheet: NVBG020N120SC1 Datasheet (PDF)
The NVBG020N120SC1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.