


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,11A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Reverse Recovery Time(trr) | 70ns | |
| Td(off) | 180ns | |
| Gate Charge(Qg) | 100nC | |
| Switching Energy(Eoff) | 1.3mJ | |
| Current - Collector(Ic) | 43A | |
| Pd - Power Dissipation | 298W | |
| IGBT Type | NPT (Non-Punch Through) | |
| Turn-On Energy (Eon) | 950uJ | |
| Td(on) | 23ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTG11N120CND technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,11A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Reverse Recovery Time(trr) | 70ns | |
| Td(off) | 180ns | |
| Gate Charge(Qg) | 100nC | |
| Switching Energy(Eoff) | 1.3mJ | |
| Current - Collector(Ic) | 43A | |
| Pd - Power Dissipation | 298W | |
| IGBT Type | NPT (Non-Punch Through) | |
| Turn-On Energy (Eon) | 950uJ | |
| Td(on) | 23ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
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The HGTG11N120CND schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.