S1M014120H
- Manufacturer
- MFR.Part #
- S1M014120H
- JLCPCB Part #
- C22363603
- Package
- TO-247-4L
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 14mΩ 152A 2.8V 230nC 235pF 5.469nF 625W 7.5pF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Sichainsemi | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.469nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Gate Charge(Qg) | 230nC | |
| Current - Continuous Drain(Id) | 152A | |
| Reverse Transfer Capacitance (Crss) | 7.5pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 625W | |
| Output Capacitance(Coss) | 235pF | |
| RDS(on) | 14mΩ |
* Images are for reference only
S1M014120H
Extended- Manufacturer
- MFR.Part #
- S1M014120H
- JLCPCB Part #
- C22363603
- Package
- TO-247-4L
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 14mΩ 152A 2.8V 230nC 235pF 5.469nF 625W 7.5pF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
S1M014120H
Extended- Manufacturer
- MFR.Part #
- S1M014120H
- JLCPCB Part #
- C22363603
- Package
- TO-247-4L
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 14mΩ 152A 2.8V 230nC 235pF 5.469nF 625W 7.5pF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
S1M014120H Specifications
S1M014120H technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Sichainsemi | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.469nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Gate Charge(Qg) | 230nC | |
| Current - Continuous Drain(Id) | 152A | |
| Reverse Transfer Capacitance (Crss) | 7.5pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 625W | |
| Output Capacitance(Coss) | 235pF | |
| RDS(on) | 14mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the S1M014120H. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
S1M014120H Documents
S1M014120H datasheets or manufacturer documentation.
Datasheet: S1M014120H Datasheet (PDF)
S1M014120H Schematic Symbol & PCB Footprint
The S1M014120H schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.