RSM120080Z
- Manufacturer
- MFR.Part #
- RSM120080Z
- JLCPCB Part #
- C5371983
- Package
- TO-247-4
- Description
- -40℃~+150℃ 1.2kV 1.475nF 11pF 166W 2.4V 36A 79nC 80mΩ@20V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | REASUNOS | |
| Package | TO-247-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.475nF | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Gate Charge(Qg) | 79nC | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| Current - Continuous Drain(Id) | 36A | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 166W | |
| RDS(on) | 80mΩ@20V |
* Images are for reference only
RSM120080Z
Extended- Manufacturer
- MFR.Part #
- RSM120080Z
- JLCPCB Part #
- C5371983
- Package
- TO-247-4
- Description
- -40℃~+150℃ 1.2kV 1.475nF 11pF 166W 2.4V 36A 79nC 80mΩ@20V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
RSM120080Z
Extended- Manufacturer
- MFR.Part #
- RSM120080Z
- JLCPCB Part #
- C5371983
- Package
- TO-247-4
- Description
- -40℃~+150℃ 1.2kV 1.475nF 11pF 166W 2.4V 36A 79nC 80mΩ@20V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
RSM120080Z Specifications
RSM120080Z technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | REASUNOS | |
| Package | TO-247-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.475nF | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Gate Charge(Qg) | 79nC | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| Current - Continuous Drain(Id) | 36A | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 166W | |
| RDS(on) | 80mΩ@20V |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the RSM120080Z. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
RSM120080Z Documents
RSM120080Z datasheets or manufacturer documentation.
Datasheet: RSM120080Z Datasheet (PDF)
RSM120080Z Schematic Symbol & PCB Footprint
The RSM120080Z schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.