- Manufacturer
- MFR.Part #
- IMW65R048M1H
- JLCPCB Part #
- C536287
- Package
- TO-247-3
- Description
- -55℃~+150℃ 1.118nF 125W 13pF 168pF 33nC 39A 5.7V 64mΩ 650V TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 1.118nF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 33nC | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| Current - Continuous Drain(Id) | 39A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ |
* Images are for reference only
IMW65R048M1H
Extended- Manufacturer
- MFR.Part #
- IMW65R048M1H
- JLCPCB Part #
- C536287
- Package
- TO-247-3
- Description
- -55℃~+150℃ 1.118nF 125W 13pF 168pF 33nC 39A 5.7V 64mΩ 650V TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- IMW65R048M1H
- JLCPCB Part #
- C536287
- Package
- TO-247-3
- Description
- -55℃~+150℃ 1.118nF 125W 13pF 168pF 33nC 39A 5.7V 64mΩ 650V TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IMW65R048M1H Specifications
IMW65R048M1H technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Ciss-Input Capacitance | 1.118nF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 33nC | |
| Reverse Transfer Capacitance (Crss) | 13pF | |
| Current - Continuous Drain(Id) | 39A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 168pF | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IMW65R048M1H. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IMW65R048M1H Documents
IMW65R048M1H datasheets or manufacturer documentation.
Datasheet: IMW65R048M1H Datasheet (PDF)
IMW65R048M1H Schematic Symbol & PCB Footprint
The IMW65R048M1H schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.