


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Ciss-Input Capacitance | 2.13nF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 57nC | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| Current - Continuous Drain(Id) | 52A | |
| Output Capacitance(Coss) | 107pF | |
| Pd - Power Dissipation | 228W | |
| RDS(on) | 59mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AIMW120R045M1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Ciss-Input Capacitance | 2.13nF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 57nC | |
| Reverse Transfer Capacitance (Crss) | 11pF | |
| Current - Continuous Drain(Id) | 52A | |
| Output Capacitance(Coss) | 107pF | |
| Pd - Power Dissipation | 228W | |
| RDS(on) | 59mΩ |
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AIMW120R045M1 datasheets or manufacturer documentation.
Datasheet: AIMW120R045M1 Datasheet (PDF)
The AIMW120R045M1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.