



Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Vgs | ±20V | |
| Gate Charge(Qg) | 55nC@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Current - Continuous Drain(Id) | 80A | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 523pF | |
| RDS(on) | 8.2mΩ@10V | |
| Input Capacitance(Ciss) | 3.98nF | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IPD082N10N3G technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Vgs | ±20V | |
| Gate Charge(Qg) | 55nC@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Current - Continuous Drain(Id) | 80A | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 523pF | |
| RDS(on) | 8.2mΩ@10V | |
| Input Capacitance(Ciss) | 3.98nF | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W |
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IPD082N10N3G datasheets or manufacturer documentation.
Datasheet: IPD082N10N3G Datasheet (PDF)
The IPD082N10N3G schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.