- Manufacturer
- MFR.Part #
- RGT8NS65DGTL
- JLCPCB Part #
- C7044785
- Package
- TO-263-3
- Description
- -40℃~+175℃@(Tj) 12A 13.5nC 14pF 17ns 2.1V@4A,15V 220pF 4.5pF 40ns 5V@2.8mA 650V 65W 69ns 8A TO-263-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | ROHM Semicon | |
| Package | TO-263-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.8mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 220pF | |
| Td(off) | 69ns | |
| Gate Charge(Qg) | 13.5nC | |
| Pulsed Current- Forward(Ifm) | 12A | |
| Reverse Transfer Capacitance (Cres) | 4.5pF | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 40ns | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 2.1V@4A,15V | |
| Pd - Power Dissipation | 65W | |
| Output Capacitance(Coes) | 14pF | |
| Td(on) | 17ns |
* Images are for reference only
RGT8NS65DGTL
Extended- Manufacturer
- MFR.Part #
- RGT8NS65DGTL
- JLCPCB Part #
- C7044785
- Package
- TO-263-3
- Description
- -40℃~+175℃@(Tj) 12A 13.5nC 14pF 17ns 2.1V@4A,15V 220pF 4.5pF 40ns 5V@2.8mA 650V 65W 69ns 8A TO-263-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- RGT8NS65DGTL
- JLCPCB Part #
- C7044785
- Package
- TO-263-3
- Description
- -40℃~+175℃@(Tj) 12A 13.5nC 14pF 17ns 2.1V@4A,15V 220pF 4.5pF 40ns 5V@2.8mA 650V 65W 69ns 8A TO-263-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
RGT8NS65DGTL Specifications
RGT8NS65DGTL technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | ROHM Semicon | |
| Package | TO-263-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@2.8mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 220pF | |
| Td(off) | 69ns | |
| Gate Charge(Qg) | 13.5nC | |
| Pulsed Current- Forward(Ifm) | 12A | |
| Reverse Transfer Capacitance (Cres) | 4.5pF | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 40ns | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 2.1V@4A,15V | |
| Pd - Power Dissipation | 65W | |
| Output Capacitance(Coes) | 14pF | |
| Td(on) | 17ns |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the RGT8NS65DGTL. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
RGT8NS65DGTL Documents
RGT8NS65DGTL datasheets or manufacturer documentation.
Datasheet: RGT8NS65DGTL Datasheet (PDF)
RGT8NS65DGTL Schematic Symbol & PCB Footprint
The RGT8NS65DGTL schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.