- Manufacturer
- MFR.Part #
- AFGB40T65SQDN
- JLCPCB Part #
- C603141
- Package
- D2PAK
- Description
- -55℃~+175℃@(Tj) 131ns 160A 17.6ns 2.1V@40A,15V 2.495nF 2.6V@40mA 229uJ 238W 50pF 650V 75.2ns 76nC@15V 80A 858uJ 9pF D2PAK IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@40mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.495nF | |
| Td(off) | 75.2ns | |
| Gate Charge(Qg) | 76nC@15V | |
| Switching Energy(Eoff) | 229uJ | |
| Pulsed Current- Forward(Ifm) | 160A | |
| Reverse Transfer Capacitance (Cres) | 9pF | |
| Turn-On Energy (Eon) | 858uJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 131ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V | |
| Pd - Power Dissipation | 238W | |
| Td(on) | 17.6ns | |
| Output Capacitance(Coes) | 50pF |
* Images are for reference only
AFGB40T65SQDN
Extended- Manufacturer
- MFR.Part #
- AFGB40T65SQDN
- JLCPCB Part #
- C603141
- Package
- D2PAK
- Description
- -55℃~+175℃@(Tj) 131ns 160A 17.6ns 2.1V@40A,15V 2.495nF 2.6V@40mA 229uJ 238W 50pF 650V 75.2ns 76nC@15V 80A 858uJ 9pF D2PAK IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- AFGB40T65SQDN
- JLCPCB Part #
- C603141
- Package
- D2PAK
- Description
- -55℃~+175℃@(Tj) 131ns 160A 17.6ns 2.1V@40A,15V 2.495nF 2.6V@40mA 229uJ 238W 50pF 650V 75.2ns 76nC@15V 80A 858uJ 9pF D2PAK IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AFGB40T65SQDN Specifications
AFGB40T65SQDN technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@40mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.495nF | |
| Td(off) | 75.2ns | |
| Gate Charge(Qg) | 76nC@15V | |
| Switching Energy(Eoff) | 229uJ | |
| Pulsed Current- Forward(Ifm) | 160A | |
| Reverse Transfer Capacitance (Cres) | 9pF | |
| Turn-On Energy (Eon) | 858uJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 131ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V | |
| Pd - Power Dissipation | 238W | |
| Td(on) | 17.6ns | |
| Output Capacitance(Coes) | 50pF |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the AFGB40T65SQDN. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
AFGB40T65SQDN Documents
AFGB40T65SQDN datasheets or manufacturer documentation.
Datasheet: AFGB40T65SQDN Datasheet (PDF)
AFGB40T65SQDN Schematic Symbol & PCB Footprint
The AFGB40T65SQDN schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.