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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. HC260N070B2E
HC260N070B2E - 1
HC260N070B2E - 2
HC260N070B2E - 3
Extended1/3
* Images are for reference only
HC260N070B2E
Attributes
Value
Manufacturer
HIMINGWAY
MFR.Part #
HC260N070B2E
JLCPCB Part #
C54864526
Package
TO220-3L
Description
TO220-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHIMINGWAY
PackageTO220-3L
Gate Charge(Qg)11.6nC
Current - Continuous Drain(Id)11A
Drain to Source Voltage700V
RDS(on)320mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. HC260N070B2E
HC260N070B2E

* Images are for reference only

HC260N070B2E

Extended
Manufacturer

HIMINGWAY

MFR.Part #
HC260N070B2E
JLCPCB Part #
C54864526
Package
TO220-3L
Description
TO220-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

HC260N070B2E

* Images are for reference only

HC260N070B2E
Extended
Manufacturer

HIMINGWAY

MFR.Part #
HC260N070B2E
JLCPCB Part #
C54864526
Package
TO220-3L
Description
TO220-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

HC260N070B2E Specifications

HC260N070B2E technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHIMINGWAY
PackageTO220-3L
Gate Charge(Qg)11.6nC
Current - Continuous Drain(Id)11A
Drain to Source Voltage700V
RDS(on)320mΩ
Results remaining: 0

PCB Assembly Tips

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  • 1

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  • 2

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HC260N070B2E Schematic Symbol & PCB Footprint

The HC260N070B2E schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.