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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SCT015W120G3-4AG
SCT015W120G3-4AG
Extended
* Images are for reference only
SCT015W120G3-4AG
Attributes
Value
Manufacturer
STMicroelectronics
MFR.Part #
SCT015W120G3-4AG
JLCPCB Part #
C5456203
Package
HiP247-4
Description
-55℃~+200℃ 1 N-channel 1.2kV 129A 167nC 183pF 20mΩ 28pF 3.512nF 4.2V 673W N-Channel HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSTMicroelectronics
PackageHiP247-4
Operating Temperature-55℃~+200℃
TypeN-Channel
Ciss-Input Capacitance3.512nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4.2V
Gate Charge(Qg)167nC
Reverse Transfer Capacitance (Crss)28pF
Current - Continuous Drain(Id)129A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)183pF
Pd - Power Dissipation673W
RDS(on)20mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SCT015W120G3-4AG
SCT015W120G3-4AG

* Images are for reference only

SCT015W120G3-4AG

Extended
Manufacturer

STMicroelectronics

MFR.Part #
SCT015W120G3-4AG
JLCPCB Part #
C5456203
Package
HiP247-4
Description
-55℃~+200℃ 1 N-channel 1.2kV 129A 167nC 183pF 20mΩ 28pF 3.512nF 4.2V 673W N-Channel HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SCT015W120G3-4AG

* Images are for reference only

SCT015W120G3-4AG
Extended
Manufacturer

STMicroelectronics

MFR.Part #
SCT015W120G3-4AG
JLCPCB Part #
C5456203
Package
HiP247-4
Description
-55℃~+200℃ 1 N-channel 1.2kV 129A 167nC 183pF 20mΩ 28pF 3.512nF 4.2V 673W N-Channel HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SCT015W120G3-4AG Specifications

SCT015W120G3-4AG technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSTMicroelectronics
PackageHiP247-4
Operating Temperature-55℃~+200℃
TypeN-Channel
Ciss-Input Capacitance3.512nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4.2V
Gate Charge(Qg)167nC
Reverse Transfer Capacitance (Crss)28pF
Current - Continuous Drain(Id)129A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)183pF
Pd - Power Dissipation673W
RDS(on)20mΩ
Results remaining: 0

PCB Assembly Tips

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SCT015W120G3-4AG Schematic Symbol & PCB Footprint

The SCT015W120G3-4AG schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.