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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P160D7
NCES120P160D7 - 1
NCES120P160D7 - 2
NCES120P160D7 - 3
Extended1/3
* Images are for reference only
NCES120P160D7
Attributes
Value
Manufacturer
Wuxi NCE Power Semiconductor
MFR.Part #
NCES120P160D7
JLCPCB Part #
C54426066
Package
TO263-7L
Description
-55℃~+175℃ 1.2kV 160mΩ 16pF 17A 26.5nC 4.8V 618pF 66pF 88W N-Channel TO263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageTO263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance618pF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)26.5nC
Reverse Transfer Capacitance (Crss)16pF
Current - Continuous Drain(Id)17A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)66pF
Pd - Power Dissipation88W
RDS(on)160mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P160D7
NCES120P160D7

* Images are for reference only

NCES120P160D7

Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P160D7
JLCPCB Part #
C54426066
Package
TO263-7L
Description
-55℃~+175℃ 1.2kV 160mΩ 16pF 17A 26.5nC 4.8V 618pF 66pF 88W N-Channel TO263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P160D7

* Images are for reference only

NCES120P160D7
Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P160D7
JLCPCB Part #
C54426066
Package
TO263-7L
Description
-55℃~+175℃ 1.2kV 160mΩ 16pF 17A 26.5nC 4.8V 618pF 66pF 88W N-Channel TO263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P160D7 Specifications

NCES120P160D7 technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageTO263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance618pF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)26.5nC
Reverse Transfer Capacitance (Crss)16pF
Current - Continuous Drain(Id)17A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)66pF
Pd - Power Dissipation88W
RDS(on)160mΩ
Results remaining: 0

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NCES120P160D7 Schematic Symbol & PCB Footprint

The NCES120P160D7 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.