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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P160QD
NCES120P160QD - 1
NCES120P160QD - 2
NCES120P160QD - 3
Extended1/3
* Images are for reference only
NCES120P160QD
Attributes
Value
Manufacturer
Wuxi NCE Power Semiconductor
MFR.Part #
NCES120P160QD
JLCPCB Part #
C54426065
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 125W 160mΩ 16pF 20A 26.5nC 4.8V 618pF 66pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageQDPAK-22L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance618pF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)26.5nC
Reverse Transfer Capacitance (Crss)16pF
Current - Continuous Drain(Id)20A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)66pF
Pd - Power Dissipation125W
RDS(on)160mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P160QD
NCES120P160QD

* Images are for reference only

NCES120P160QD

Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P160QD
JLCPCB Part #
C54426065
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 125W 160mΩ 16pF 20A 26.5nC 4.8V 618pF 66pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P160QD

* Images are for reference only

NCES120P160QD
Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P160QD
JLCPCB Part #
C54426065
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 125W 160mΩ 16pF 20A 26.5nC 4.8V 618pF 66pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P160QD Specifications

NCES120P160QD technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageQDPAK-22L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance618pF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)26.5nC
Reverse Transfer Capacitance (Crss)16pF
Current - Continuous Drain(Id)20A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)66pF
Pd - Power Dissipation125W
RDS(on)160mΩ
Results remaining: 0

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NCES120P160QD Schematic Symbol & PCB Footprint

The NCES120P160QD schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.