- Manufacturer
- MFR.Part #
- NCES120P080D7
- JLCPCB Part #
- C54426060
- Package
- TO-263-7L
- Description
- -55℃~+175℃ 1.02nF 1.2kV 103mΩ 174W 3.6pF 32A 4.8V 48pF 55.2nC N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Wuxi NCE Power Semiconductor | |
| Package | TO-263-7L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.02nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55.2nC | |
| Reverse Transfer Capacitance (Crss) | 3.6pF | |
| Current - Continuous Drain(Id) | 32A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 174W | |
| RDS(on) | 103mΩ |
* Images are for reference only
NCES120P080D7
Extended- Manufacturer
- MFR.Part #
- NCES120P080D7
- JLCPCB Part #
- C54426060
- Package
- TO-263-7L
- Description
- -55℃~+175℃ 1.02nF 1.2kV 103mΩ 174W 3.6pF 32A 4.8V 48pF 55.2nC N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- NCES120P080D7
- JLCPCB Part #
- C54426060
- Package
- TO-263-7L
- Description
- -55℃~+175℃ 1.02nF 1.2kV 103mΩ 174W 3.6pF 32A 4.8V 48pF 55.2nC N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
NCES120P080D7 Specifications
NCES120P080D7 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Wuxi NCE Power Semiconductor | |
| Package | TO-263-7L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.02nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 55.2nC | |
| Reverse Transfer Capacitance (Crss) | 3.6pF | |
| Current - Continuous Drain(Id) | 32A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 48pF | |
| Pd - Power Dissipation | 174W | |
| RDS(on) | 103mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the NCES120P080D7. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
NCES120P080D7 Schematic Symbol & PCB Footprint
The NCES120P080D7 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.