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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P040QD
NCES120P040QD - 1
NCES120P040QD - 2
NCES120P040QD - 3
Extended1/3
* Images are for reference only
NCES120P040QD
Attributes
Value
Manufacturer
Wuxi NCE Power Semiconductor
MFR.Part #
NCES120P040QD
JLCPCB Part #
C54426058
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 107nC 2.21nF 326W 4.3pF 4.8V 40mΩ 65A 86pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageQDPAK-22L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.21nF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)107nC
Reverse Transfer Capacitance (Crss)4.3pF
Current - Continuous Drain(Id)65A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)86pF
Pd - Power Dissipation326W
RDS(on)40mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NCES120P040QD
NCES120P040QD

* Images are for reference only

NCES120P040QD

Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P040QD
JLCPCB Part #
C54426058
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 107nC 2.21nF 326W 4.3pF 4.8V 40mΩ 65A 86pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P040QD

* Images are for reference only

NCES120P040QD
Extended
Manufacturer

Wuxi NCE Power Semiconductor

MFR.Part #
NCES120P040QD
JLCPCB Part #
C54426058
Package
QDPAK-22L
Description
-55℃~+175℃ 1.2kV 107nC 2.21nF 326W 4.3pF 4.8V 40mΩ 65A 86pF N-Channel QDPAK-22L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NCES120P040QD Specifications

NCES120P040QD technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerWuxi NCE Power Semiconductor
PackageQDPAK-22L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.21nF
Gate Threshold Voltage (Vgs(th))4.8V
Number1 N-channel
Gate Charge(Qg)107nC
Reverse Transfer Capacitance (Crss)4.3pF
Current - Continuous Drain(Id)65A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)86pF
Pd - Power Dissipation326W
RDS(on)40mΩ
Results remaining: 0

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NCES120P040QD Schematic Symbol & PCB Footprint

The NCES120P040QD schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.