- Manufacturer
- MFR.Part #
- NCES120P013T
- JLCPCB Part #
- C54425845
- Package
- TO-247-3L
- Description
- -55℃~+175℃ 1.2kV 13mΩ 158A 236nC 270pF 4.8V 6.3nF 652W 6pF N-Channel TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Wuxi NCE Power Semiconductor | |
| Package | TO-247-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 6.3nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 236nC | |
| Current - Continuous Drain(Id) | 158A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 652W | |
| Output Capacitance(Coss) | 270pF | |
| RDS(on) | 13mΩ |
* Images are for reference only
NCES120P013T
Extended- Manufacturer
- MFR.Part #
- NCES120P013T
- JLCPCB Part #
- C54425845
- Package
- TO-247-3L
- Description
- -55℃~+175℃ 1.2kV 13mΩ 158A 236nC 270pF 4.8V 6.3nF 652W 6pF N-Channel TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- NCES120P013T
- JLCPCB Part #
- C54425845
- Package
- TO-247-3L
- Description
- -55℃~+175℃ 1.2kV 13mΩ 158A 236nC 270pF 4.8V 6.3nF 652W 6pF N-Channel TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
NCES120P013T Specifications
NCES120P013T technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Wuxi NCE Power Semiconductor | |
| Package | TO-247-3L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 6.3nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 236nC | |
| Current - Continuous Drain(Id) | 158A | |
| Reverse Transfer Capacitance (Crss) | 6pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 652W | |
| Output Capacitance(Coss) | 270pF | |
| RDS(on) | 13mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the NCES120P013T. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
NCES120P013T Schematic Symbol & PCB Footprint
The NCES120P013T schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.