



Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 2.475nF | |
| Td(off) | 310ns | |
| Gate Charge(Qg) | 235nC@15V | |
| Switching Energy(Eoff) | 590uJ | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Current - Collector Pulsed (Icm) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 85ns | |
| Current - Collector(Ic) | 49.5A、76A | |
| Vce Saturation(VCE(sat)) | 1.35V | |
| Collector Cut-Off Current (Ices) | 900uA | |
| Pd - Power Dissipation | 115.4W、230.8W | |
| Output Capacitance(Coes) | 77pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 20ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IKW40N65ET7 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 2.475nF | |
| Td(off) | 310ns | |
| Gate Charge(Qg) | 235nC@15V | |
| Switching Energy(Eoff) | 590uJ | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Current - Collector Pulsed (Icm) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 85ns | |
| Current - Collector(Ic) | 49.5A、76A | |
| Vce Saturation(VCE(sat)) | 1.35V | |
| Collector Cut-Off Current (Ices) | 900uA | |
| Pd - Power Dissipation | 115.4W、230.8W | |
| Output Capacitance(Coes) | 77pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 20ns |
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IKW40N65ET7 datasheets or manufacturer documentation.
Datasheet: IKW40N65ET7 Datasheet (PDF)
The IKW40N65ET7 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.