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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. BCBF65N25W1
BCBF65N25W1 - 1
BCBF65N25W1 - 2
BCBF65N25W1 - 3
Extended1/3
* Images are for reference only
BCBF65N25W1
Attributes
Value
Manufacturer
Bestirpower
MFR.Part #
BCBF65N25W1
JLCPCB Part #
C52269250
Package
TO-263-7L
Description
-55℃~+175℃ 1 N-channel 10.1pF 124nC 185pF 2.6V 2.9nF 25mΩ@18V 375W 650V 83.3A N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerBestirpower
PackageTO-263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.9nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.6V
Gate Charge(Qg)124nC
Reverse Transfer Capacitance (Crss)10.1pF
Current - Continuous Drain(Id)83.3A
Drain to Source Voltage650V
Output Capacitance(Coss)185pF
Pd - Power Dissipation375W
RDS(on)25mΩ@18V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. BCBF65N25W1
BCBF65N25W1

* Images are for reference only

BCBF65N25W1

Extended
Manufacturer

Bestirpower

MFR.Part #
BCBF65N25W1
JLCPCB Part #
C52269250
Package
TO-263-7L
Description
-55℃~+175℃ 1 N-channel 10.1pF 124nC 185pF 2.6V 2.9nF 25mΩ@18V 375W 650V 83.3A N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

BCBF65N25W1

* Images are for reference only

BCBF65N25W1
Extended
Manufacturer

Bestirpower

MFR.Part #
BCBF65N25W1
JLCPCB Part #
C52269250
Package
TO-263-7L
Description
-55℃~+175℃ 1 N-channel 10.1pF 124nC 185pF 2.6V 2.9nF 25mΩ@18V 375W 650V 83.3A N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

BCBF65N25W1 Specifications

BCBF65N25W1 technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerBestirpower
PackageTO-263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.9nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.6V
Gate Charge(Qg)124nC
Reverse Transfer Capacitance (Crss)10.1pF
Current - Continuous Drain(Id)83.3A
Drain to Source Voltage650V
Output Capacitance(Coss)185pF
Pd - Power Dissipation375W
RDS(on)25mΩ@18V
Results remaining: 0

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BCBF65N25W1 Schematic Symbol & PCB Footprint

The BCBF65N25W1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.