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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IPD60R360P7S-HXY
IPD60R360P7S-HXY - 1
IPD60R360P7S-HXY - 2
IPD60R360P7S-HXY - 3
Extended1/3
* Images are for reference only
IPD60R360P7S-HXY
Attributes
Value
Manufacturer
HXY MOSFET
MFR.Part #
IPD60R360P7S-HXY
JLCPCB Part #
C52098372
Package
TO-252-2L
Description
-55℃~+175℃ 0.9pF 11.2nC 15A 180pF 20pF 220mΩ 4V 52W 650V TO-252-2L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-252-2L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance180pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))3.5V
Gate Charge(Qg)11.2nC
Reverse Transfer Capacitance (Crss)0.9pF
Current - Continuous Drain(Id)15A
Drain to Source Voltage650V
Pd - Power Dissipation52W
Output Capacitance(Coss)20pF
RDS(on)180mΩ@18V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IPD60R360P7S-HXY
IPD60R360P7S-HXY

* Images are for reference only

IPD60R360P7S-HXY

Extended
Manufacturer

HXY MOSFET

MFR.Part #
IPD60R360P7S-HXY
JLCPCB Part #
C52098372
Package
TO-252-2L
Description
-55℃~+175℃ 0.9pF 11.2nC 15A 180pF 20pF 220mΩ 4V 52W 650V TO-252-2L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IPD60R360P7S-HXY

* Images are for reference only

IPD60R360P7S-HXY
Extended
Manufacturer

HXY MOSFET

MFR.Part #
IPD60R360P7S-HXY
JLCPCB Part #
C52098372
Package
TO-252-2L
Description
-55℃~+175℃ 0.9pF 11.2nC 15A 180pF 20pF 220mΩ 4V 52W 650V TO-252-2L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IPD60R360P7S-HXY Specifications

IPD60R360P7S-HXY technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-252-2L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance180pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))3.5V
Gate Charge(Qg)11.2nC
Reverse Transfer Capacitance (Crss)0.9pF
Current - Continuous Drain(Id)15A
Drain to Source Voltage650V
Pd - Power Dissipation52W
Output Capacitance(Coss)20pF
RDS(on)180mΩ@18V
Results remaining: 0

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  • 2

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IPD60R360P7S-HXY Schematic Symbol & PCB Footprint

The IPD60R360P7S-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.