


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | onsemi | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 6.23nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 329nC | |
| Current - Continuous Drain(Id) | 127A | |
| Reverse Transfer Capacitance (Crss) | 29pF | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 262pF | |
| Pd - Power Dissipation | 343W | |
| RDS(on) | 14mΩ@18V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
NTH4L014N120M3P technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | onsemi | |
| Package | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 6.23nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 329nC | |
| Current - Continuous Drain(Id) | 127A | |
| Reverse Transfer Capacitance (Crss) | 29pF | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 262pF | |
| Pd - Power Dissipation | 343W | |
| RDS(on) | 14mΩ@18V |
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NTH4L014N120M3P datasheets or manufacturer documentation.
Datasheet: NTH4L014N120M3P Datasheet (PDF)
The NTH4L014N120M3P schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.