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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NTH4L014N120M3P
NTH4L014N120M3P - 1
NTH4L014N120M3P - 2
NTH4L014N120M3P - 3
Extended1/3
* Images are for reference only
NTH4L014N120M3P
Attributes
Value
Manufacturer
onsemi
MFR.Part #
NTH4L014N120M3P
JLCPCB Part #
C5209032
Package
TO-247-4L
Description
-55℃~+175℃ 1.2kV 127A 14mΩ@18V 29pF 329nC 343W 3V 6.23nF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Manufactureronsemi
PackageTO-247-4L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance6.23nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))3V
Gate Charge(Qg)329nC
Current - Continuous Drain(Id)127A
Reverse Transfer Capacitance (Crss)29pF
Drain to Source Voltage1.2kV
Output Capacitance(Coss)262pF
Pd - Power Dissipation343W
RDS(on)14mΩ@18V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NTH4L014N120M3P
NTH4L014N120M3P

* Images are for reference only

NTH4L014N120M3P

Extended
Manufacturer

onsemi

MFR.Part #
NTH4L014N120M3P
JLCPCB Part #
C5209032
Package
TO-247-4L
Description
-55℃~+175℃ 1.2kV 127A 14mΩ@18V 29pF 329nC 343W 3V 6.23nF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NTH4L014N120M3P

* Images are for reference only

NTH4L014N120M3P
Extended
Manufacturer

onsemi

MFR.Part #
NTH4L014N120M3P
JLCPCB Part #
C5209032
Package
TO-247-4L
Description
-55℃~+175℃ 1.2kV 127A 14mΩ@18V 29pF 329nC 343W 3V 6.23nF N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NTH4L014N120M3P Specifications

NTH4L014N120M3P technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Manufactureronsemi
PackageTO-247-4L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance6.23nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))3V
Gate Charge(Qg)329nC
Current - Continuous Drain(Id)127A
Reverse Transfer Capacitance (Crss)29pF
Drain to Source Voltage1.2kV
Output Capacitance(Coss)262pF
Pd - Power Dissipation343W
RDS(on)14mΩ@18V
Results remaining: 0

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NTH4L014N120M3P Documents

NTH4L014N120M3P datasheets or manufacturer documentation.

Datasheet: NTH4L014N120M3P Datasheet (PDF)

NTH4L014N120M3P Schematic Symbol & PCB Footprint

The NTH4L014N120M3P schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.