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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. C3M0040120J1-HXY
C3M0040120J1-HXY - 1
C3M0040120J1-HXY - 2
C3M0040120J1-HXY - 3
Extended1/3
* Images are for reference only
C3M0040120J1-HXY
Attributes
Value
Manufacturer
HXY MOSFET
MFR.Part #
C3M0040120J1-HXY
JLCPCB Part #
C49256953
Package
TO-263-7L
Description
-40℃~+175℃ 1.2kV 112nC 125pF 14pF 2.766nF 326W 4V 52mΩ 65A TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-263-7L
Operating Temperature-40℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.766nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
Gate Charge(Qg)112nC
Reverse Transfer Capacitance (Crss)14pF
Current - Continuous Drain(Id)65A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)125pF
Pd - Power Dissipation326W
RDS(on)52mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. C3M0040120J1-HXY
C3M0040120J1-HXY

* Images are for reference only

C3M0040120J1-HXY

Extended
Manufacturer

HXY MOSFET

MFR.Part #
C3M0040120J1-HXY
JLCPCB Part #
C49256953
Package
TO-263-7L
Description
-40℃~+175℃ 1.2kV 112nC 125pF 14pF 2.766nF 326W 4V 52mΩ 65A TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

C3M0040120J1-HXY

* Images are for reference only

C3M0040120J1-HXY
Extended
Manufacturer

HXY MOSFET

MFR.Part #
C3M0040120J1-HXY
JLCPCB Part #
C49256953
Package
TO-263-7L
Description
-40℃~+175℃ 1.2kV 112nC 125pF 14pF 2.766nF 326W 4V 52mΩ 65A TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

C3M0040120J1-HXY Specifications

C3M0040120J1-HXY technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-263-7L
Operating Temperature-40℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.766nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
Gate Charge(Qg)112nC
Reverse Transfer Capacitance (Crss)14pF
Current - Continuous Drain(Id)65A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)125pF
Pd - Power Dissipation326W
RDS(on)52mΩ
Results remaining: 0

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C3M0040120J1-HXY Schematic Symbol & PCB Footprint

The C3M0040120J1-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.