- Manufacturer
- MFR.Part #
- SCTW40N120G2VAG
- JLCPCB Part #
- C472655
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.23nF 1.2kV 105mΩ 15pF 290W 33A 56pF 5V 63nC HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP-247 | |
| Operating Temperature | -55℃~+200℃ | |
| Ciss-Input Capacitance | 1.23nF | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Gate Charge(Qg) | 63nC | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| Current - Continuous Drain(Id) | 33A | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 290W | |
| Output Capacitance(Coss) | 56pF | |
| RDS(on) | 105mΩ |
* Images are for reference only
SCTW40N120G2VAG
Extended- Manufacturer
- MFR.Part #
- SCTW40N120G2VAG
- JLCPCB Part #
- C472655
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.23nF 1.2kV 105mΩ 15pF 290W 33A 56pF 5V 63nC HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- SCTW40N120G2VAG
- JLCPCB Part #
- C472655
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.23nF 1.2kV 105mΩ 15pF 290W 33A 56pF 5V 63nC HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SCTW40N120G2VAG Specifications
SCTW40N120G2VAG technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP-247 | |
| Operating Temperature | -55℃~+200℃ | |
| Ciss-Input Capacitance | 1.23nF | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Gate Charge(Qg) | 63nC | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| Current - Continuous Drain(Id) | 33A | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 290W | |
| Output Capacitance(Coss) | 56pF | |
| RDS(on) | 105mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the SCTW40N120G2VAG. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
SCTW40N120G2VAG Documents
SCTW40N120G2VAG datasheets or manufacturer documentation.
Datasheet: SCTW40N120G2VAG Datasheet (PDF)
SCTW40N120G2VAG Schematic Symbol & PCB Footprint
The SCTW40N120G2VAG schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.